DiodesZetex N-Channel MOSFET 380 mA, 30 V Enhancement, 3-Pin SC-89 DMN313DLT-7

DiodesZetex DMN313DLT-7 is a high-quality N-Channel enhancement mode MOSFET designed for surface mount applications. It supports a maximum continuous drain current of 380 milliamps and can block voltages up to 30 volts, fitting compact designs with its 3-pin SC-89 package. Its low drain-source resistance of 3.2 ohms and typical gate charge of 0.5 nC ensure efficient switching and minimal power loss, making it suitable for use in electronic circuits requiring reliable power control.

The device operates reliably across a broad temperature range from -55°C to +150°C and adheres to the AEC-Q101 automotive standard, making it ideal for automotive electronics, industrial controls, and other rigorous environments. Its compact dimensions contribute to efficient board space usage in dense PCB layouts.

With a maximum power dissipation of 520 milliwatts and a maximum gate-source voltage rating of ±20 volts, this MOSFET is engineered for robust operation under demanding conditions. The typical forward voltage of 0.7 volts optimizes performance for power-sensitive applications.

Applications for the DMN313DLT-7 include switching regulators, load switches, and other power management tasks in industrial, automotive, and consumer electronics sectors. Its surface-mount design facilitates automated assembly and high-volume manufacturing processes.

This MOSFET features an enhancement channel mode suitable for various power switching applications. The device has a low maximum drain-source resistance of 3.2 ohms ensuring efficient conduction. It supports a wide operating temperature range from -55°C to 150°C suitable for automotive and industrial environments.

The MOSFET's small package dimensions (1.7mm length, 0.85mm width, 0.8mm height) ensure space-saving PCB designs. Typical gate charge is low at 0.5 nC enabling fast switching performance. It complies with AEC-Q101 automotive standard ensuring reliability in automotive systems.

The maximum power dissipation is 520 mW, suited for moderate power applications. Max gate-source voltage ranges between -20V and +20V offering robust control input limits. The forward voltage drop is approximately 0.7 V, optimizing energy efficiency during conduction.

For engineers and designers demanding compact, reliable, and efficient N-Channel MOSFETs, the DMN313DLT-7 from DiodesZetex provides a superior solution for power management in a range of industrial and automotive applications.

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