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Infineon Isolated HEXFET Dual N/P-Channel MOSFET 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin Philippines
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF7389TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 7.3A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 98mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 22nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.78V
Transistor Configuration Isolated
Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389PBFBrand Infineon

Key Features

  • Dual isolated HEXFET configuration integrates two P and N channel MOSFETs for compact design.
  • Maximum continuous drain current of 7.3 A with enhancement channel mode operation.
  • 8-pin SOIC surface mount package ensuring easy PCB mounting.
  • Low on-resistance of 98 milliohms to reduce power losses.
  • Maximum power dissipation rated at 2.5 W suitable for moderate load conditions.
  • Wide operating temperature range from -55°C to 150°C for reliability across environments.
  • Typical gate charge of 22 nC enabling fast switching performance.
  • Maximum gate-source voltage ±20 V protects the MOSFET gate from damage.

Product Description

Infineon IRF7389TRPBF is a dual isolated HEXFET MOSFET featuring both P-type and N-type channels designed for a wide range of electronic power switching and amplification applications. The device supports a continuous drain current rating of 7.3 amps and a maximum drain-source voltage of 30 volts, providing reliable performance in efficient power control and signal modulation circuits.

The MOSFETs are packaged in an 8-pin SOIC surface mount configuration suitable for compact, high-density PCB layouts, optimizing space utilization. Its low drain-source resistance (Rds(on)) of 98 milliohms minimizes conduction losses and heat generation, enhancing overall system efficiency.

With an enhancement-mode channel, this device ensures fast switching and stable operation with a typical gate charge of 22 nanocoulombs, allowing rapid switching frequency applications. The voltage tolerance of the gate to source is ±20 volts, providing robust protection against voltage spikes.

The robust operating temperature range from -55°C to 150°C makes this MOSFET suitable for industrial, commercial, and automotive electronic systems requiring durable semiconductor components. Despite lacking specific automotive standard certification, its design supports a variety of power management and control systems.

Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height facilitate integration into densely packed circuits while maintaining optimal thermal performance. Manufactured in the Philippines, it offers quality consistent with Infineon’s reputation for power semiconductor devices.

Dual isolated HEXFET P and N channel. Continuous drain current of 7.3 A. Maximum drain-source voltage of 30 V. Low drain-source resistance of 98 mΩ. 8-pin SOIC surface mount package. Operating temperature range from -55°C to 150°C.

Typical gate charge of 22 nC for fast switching. Maximum gate-source voltage ±20 V. Compact dimensions: 5 mm length, 4 mm width, 1.5 mm height. Manufactured in the Philippines.

This Infineon MOSFET is ideal for use in electronics manufacturing, power control modules, industrial automation, and other applications demanding high performance and compact component design. Explore the Infineon MOSFET range on EnvMart for power devices tailored to diverse engineering needs.

Infineon Isolated HEXFET Dual N/P-Channel MOSFET 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.3 A.

This MOSFET can handle a maximum drain-source voltage of 30 V.

The low drain-source resistance (Rds(on)) for this unit is 98 milliohms.

The typical gate charge for this model is 22 nanocoulombs.

The operating temperature range for this MOSFET is from -55°C to 150°C.

This model is packaged in an 8-pin SOIC surface mount configuration.

The dimensions of this unit are 5 mm in length, 4 mm in width, and 1.5 mm in height.

This device features both P-type and N-type channels in a dual isolated configuration.

The maximum power dissipation rating for this MOSFET is 2.5 W.

The maximum gate-source voltage for this model is ±20 V.

This MOSFET is suitable for power management and control systems in industrial, commercial, and automotive electronic applications.

This model is manufactured in the Philippines.

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