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| Country of Origin | Philippines |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7389TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 7.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 98mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.78V |
| Transistor Configuration | Isolated |
| Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC Infineon IRF7389PBFBrand | Infineon |
Infineon IRF7389TRPBF is a dual isolated HEXFET MOSFET featuring both P-type and N-type channels designed for a wide range of electronic power switching and amplification applications. The device supports a continuous drain current rating of 7.3 amps and a maximum drain-source voltage of 30 volts, providing reliable performance in efficient power control and signal modulation circuits.
The MOSFETs are packaged in an 8-pin SOIC surface mount configuration suitable for compact, high-density PCB layouts, optimizing space utilization. Its low drain-source resistance (Rds(on)) of 98 milliohms minimizes conduction losses and heat generation, enhancing overall system efficiency.
With an enhancement-mode channel, this device ensures fast switching and stable operation with a typical gate charge of 22 nanocoulombs, allowing rapid switching frequency applications. The voltage tolerance of the gate to source is ±20 volts, providing robust protection against voltage spikes.
The robust operating temperature range from -55°C to 150°C makes this MOSFET suitable for industrial, commercial, and automotive electronic systems requiring durable semiconductor components. Despite lacking specific automotive standard certification, its design supports a variety of power management and control systems.
Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height facilitate integration into densely packed circuits while maintaining optimal thermal performance. Manufactured in the Philippines, it offers quality consistent with Infineon’s reputation for power semiconductor devices.
Dual isolated HEXFET P and N channel. Continuous drain current of 7.3 A. Maximum drain-source voltage of 30 V. Low drain-source resistance of 98 mΩ. 8-pin SOIC surface mount package. Operating temperature range from -55°C to 150°C.
Typical gate charge of 22 nC for fast switching. Maximum gate-source voltage ±20 V. Compact dimensions: 5 mm length, 4 mm width, 1.5 mm height. Manufactured in the Philippines.
This Infineon MOSFET is ideal for use in electronics manufacturing, power control modules, industrial automation, and other applications demanding high performance and compact component design. Explore the Infineon MOSFET range on EnvMart for power devices tailored to diverse engineering needs.
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