Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 4 A Continuous Drain Current, 30 V Drain Source IRF7309TRPBF

Infineon IRF7309TRPBF is a dual N/P-Channel isolated power MOSFET from the HEXFET series featuring a maximum continuous drain current of 4 A and a maximum drain source voltage of 30 V. Packaged in an 8-Pin SOIC, this device provides space-saving, cost-effective switching solutions ideal for high component density designs.

This enhancement mode transistor operates with a maximum power dissipation of 1.4 W and is engineered for reliable operation across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and HVAC applications requiring durable semiconductor components. With a typical forward voltage of 1 V and a low drain source resistance of 80 milliohms, the IRF7309TRPBF delivers efficient power handling and reduced losses.

Additional features include isolated transistor configuration and dual elements per chip, providing versatility in circuit design where both N-type and P-type channels are required. The typical gate charge of 16.7 nC at the gate-source voltage facilitates high-speed switching performance. The robust maximum gate source voltage rating of ±20 V allows compatibility with various gate drive voltages.

The compact 8-Pin SOIC surface mount package measuring 5 mm by 4 mm by 1.5 mm ensures easy PCB mounting and integration into advanced electronic assemblies. This MOSFET is ideal for electronic components, power management, and semiconductor applications requiring dual channel performance and high efficiency.

This MOSFET is designed for space-saving and cost-effective switching applications. The device features enhancement mode operation with isolated transistor configuration. Maximum power dissipation is 1.4 W with a typical forward voltage of 1 V.

Operating temperature ranges from -55°C to 150°C, suitable for industrial environments. Package dimensions are compact, measuring 5 mm in length, 4 mm in width, and 1.5 mm in height. The device contains two elements per chip for dual channel operation.

Maximum gate source voltage tolerance is ±20 V to support robust switching control. Forward typical gate charge at Vgs is 16.7 nC, enabling efficient switching performance. The MOSFET employs a low drain source resistance of 80 mΩ for power efficiency.

Surface mount technology SOIC packaging ensures easy PCB assembly integration. Explore Infineon's extensive portfolio of MOSFET devices on EnvMart for enhanced efficiency and power management solutions.