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Infineon Isolated HEXFET 2 N-Channel MOSFET 30 V 4.9 A SOIC 8-Pin Surface Mount IRF7303TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7303TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 16.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
| Transistor Configuration | Isolated |
Key Features
- Features a low on-resistance of 80 milliohms to reduce power loss.
- Supports surface mount technology in a compact 8-pin SOIC package.
- Operates reliably at temperatures ranging from -55°C to +150°C.
- Maximum power dissipation rating of 2 watts ensures robust performance.
- Dual-channel configuration enhances design flexibility and integration.
- Maximum gate-source voltage rating of ±20 volts for broad compatibility.
- Typical gate charge of 16.7 nanocoulombs enables fast switching.
- Ideal for power supply circuits, motor control, lighting, and automotive applications.
Product Description
Infineon IRF7303TRPBF is an isolated HEXFET 2 type N-Channel MOSFET engineered for high-performance power management applications. With a maximum continuous drain current of 4.9A and a maximum drain-source voltage of 30V, this device offers efficient switching and power dissipation up to 2W. Housed in a compact 8-pin SOIC surface-mount package measuring 5mm in length, 4mm in width, and 1.5mm in height, it is ideal for space-constrained printed circuit boards.
Its low maximum drain-source resistance (Rds(on)) of 80 milliohms minimizes conduction losses, while the dual-channel transistor configuration allows enhanced design versatility. The device supports enhancement mode operation with a typical gate charge of 16.7nC, providing rapid switching capabilities.
Designed for industrial and automotive usage, it withstands extreme operating temperatures spanning -55°C to +150°C, ensuring reliable performance in demanding environments. The maximum gate-source voltage is rated at ±20V, compatible with a wide range of control circuits.
This MOSFET is widely used in power supply circuits for voltage regulation, motor control systems for efficient operation, lighting systems requiring robust switching, and consumer as well as automotive electronics for improved power efficiency.
Low on-resistance of 80mΩ ensures high efficiency. Compact SOIC package facilitates easy integration. Operates across wide temperature range for automotive and industrial applications. Dual transistor elements per chip for increased functionality.
Maximum power dissipation of 2W for durable performance. Surface mount technology optimizes PCB space utilization. Enhancement mode channel for optimal energy management. Rated for voltage up to 30V and continuous current of 4.9A.
Typical gate charge of 16.7nC enables fast switching speeds. For reliable semiconductor solutions suitable for advanced electronic design, browse more MOSFETs and power management components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.9A.
It has a maximum drain-source voltage rating of 30V.
The low on-resistance value is 80 milliohms, which helps reduce power loss.
The dimensions of the SOIC package are 5mm in length, 4mm in width, and 1.5mm in height.
The typical gate charge is 16.7 nanocoulombs.
It operates reliably within a temperature range of -55°C to +150°C.
This model supports surface mount technology.
There are 2 elements per chip in this dual-channel configuration.
The maximum power dissipation rating is 2 watts.
The maximum gate-source voltage rating is ±20 volts.
This MOSFET is suitable for power supply circuits, motor control, lighting, and automotive applications.
It utilizes an enhancement mode channel for optimal energy management.
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