Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V, 4.9 A, Enhancement Mode, 8-Pin SOIC IRF7316TRPBF

Infineon IRF7316TRPBF is an isolated HEXFET 2 type P-channel power MOSFET designed to handle a maximum continuous drain current of 4.9 A and a maximum drain-source voltage of 30 V. The device comes in an 8-pin SOIC surface mount package that supports advanced PCB layout and thermal management requirements for industrial and electronic power management applications.

This enhancement mode MOSFET features a low maximum drain-source resistance of 98 milliohms which minimizes conduction losses, thereby improving system efficiency. It has a typical gate charge of 23 nC at the gate-source voltage, allowing quick switching speeds in high-frequency applications. The maximum gate-source voltage tolerance is ±20 V, providing broad control voltage range.

With a maximum power dissipation of 2 watts, the MOSFET ensures operation under demanding thermal conditions and supports a wide operating temperature range from -55°C to 150°C for high reliability in diverse environments. The transistor is configured as an isolated element with two elements per chip, optimizing performance and robustness.

The IRF7316TRPBF has a forward voltage of -0.78 V, providing efficient current conduction characteristics ideal for power regulation and switching circuits in industrial electronics, automotive, telecommunications, and HVAC systems. Manufactured in Thailand, it meets quality manufacturing standards though no specific certifications are listed.

Infineon's HEXFET technology offers benchmark on resistance that drives down conduction losses, enabling designers to optimize system efficiency. The P-channel MOSFETs in this product family suit applications requiring surface mounting and compact form factors with excellent thermal and electrical properties.

Surface mount 8-pin SOIC package for reliable PCB integration. Enhancement mode P-channel for effective switching operation. Low drain-source resistance reduces conduction losses. Wide operating temperature from -55°C to 150°C for durability.

Isolated transistor configuration with two elements per chip. Maximum power dissipation of 2 W supports consistent performance. Typical gate charge 23 nC for fast switching. Maximum gate-source voltage ±20 V enables high control flexibility.

Forward voltage of -0.78 V improves conduction efficiency. Manufactured in Thailand ensuring consistent quality.

It is ideal for use in industrial, electronic components, power management, and semiconductor solutions in demanding environments. Explore more Infineon MOSFETs and semiconductor devices on EnvMart for reliable power control components.