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DiodesZetex Isolated Dual 2 N-Channel Power MOSFET 6.6 A 60 V Enhancement, 8-Pin SOIC DMN6040SSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMN6040SSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | MIL-STD-202, RoHS, J-STD-020, UL 94V-0, AEC-Q101 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 10.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- The MOSFET operates with maximum power dissipation of 1.7 W and has a typical gate charge of 10.4 nC.
- It supports a maximum gate-source voltage of -20 V to +20 V and features a drain-source resistance of 55 mΩ.
- Designed for robust performance, the device can function in temperatures ranging from -55°C to +150°C.
- The compact dimensions include length of 4.95 mm, width of 3.95 mm, and height of 1.5 mm.
- It complies with MIL-STD-202, RoHS, J-STD-020, UL 94V-0, and the automotive standard AEC-Q101.
- This transistor configuration is isolated with 2 elements per chip, making it suitable for automotive and industrial power switching applications.
Product Description
DiodesZetex DMN6040SSD-13 is a high-performance isolated dual 2 N-channel Power MOSFET designed for efficient power switching and amplification in industrial, automotive, and electronic applications. It supports a maximum continuous drain current of 6.6 A and a maximum drain-source voltage of 60 V, making it suitable for medium-power circuits.
The enhancement mode device incorporates an 8-pin SOIC package optimized for surface mounting, with compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height. The transistor features a low maximum drain-source resistance of 55 mΩ to ensure minimal conduction losses and improved efficiency.
Operating temperature range extends from -55°C to +150°C, enabling reliable performance in harsh environments, including automotive and industrial settings. The gate-to-source voltage rating of -20 V to +20 V and a typical gate charge of 10.4 nC provide excellent switching characteristics for fast and efficient operation.
This MOSFET complies with rigorous standards such as MIL-STD-202, RoHS, J-STD-020, UL 94V-0, and the AEC-Q101 automotive standard, underpinning its suitability for demanding applications including power management and automotive electronics.
Its isolated transistor configuration includes two independent N-channel MOSFET elements per chip, enhancing versatility in circuit designs. The DMN6040SSD-13 is ideal for engineers and designers requiring reliable, compact, and efficient power switching components in surface-mounted packages.
The MOSFET operates with maximum power dissipation of 1.7 W and has a typical gate charge of 10.4 nC. It supports a maximum gate-source voltage of -20 V to +20 V and features a drain-source resistance of 55 mΩ. Designed for robust performance, the device can function in temperatures ranging from -55°C to +150°C.
The compact dimensions include length of 4.95 mm, width of 3.95 mm, and height of 1.5 mm. It complies with MIL-STD-202, RoHS, J-STD-020, UL 94V-0, and the automotive standard AEC-Q101. This transistor configuration is isolated with 2 elements per chip, making it suitable for automotive and industrial power switching applications.
Explore the DiodesZetex product range at EnvMart for high-quality semiconductor components designed to meet the needs of modern electronic and automotive industries.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.6 A.
It supports a maximum drain-source voltage of 60 V.
The typical gate charge is 10.4 nC.
The dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
The maximum power dissipation is 1.7 W.
It can operate in temperatures ranging from -55°C to +150°C.
It uses an 8-pin SOIC package optimized for surface mounting.
The maximum drain-source resistance is 55 mΩ.
It complies with MIL-STD-202, RoHS, J-STD-020, UL 94V-0, and the automotive standard AEC-Q101.
The gate-source voltage range is -20 V to +20 V.
This model has 2 elements per chip in its isolated configuration.
It features an N-channel configuration.
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