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DiodesZetex Full Bridge 4 Type P and Type N-Channel Power MOSFET, 3.1A, 30V, Enhancement Mode, 8-Pin Surface ZXMHC3A01T8TA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 6.7mm |
| Model | ZXMHC3A01T8TA |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 330mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 3.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.95V |
| Transistor Configuration | Full Bridge |
Key Features
- Enhancement mode transistor configuration with full bridge design.
- Surface mounting type with 8 pins for compact PCB integration.
- Low maximum drain-source resistance of 330 milliohms.
- Maximum power dissipation of 1.7 watts for efficient heat management.
- Operating temperature range from -55°C to +150°C.
- Typical gate charge of 3.9 nC at specified gate voltage.
- Maximum gate-source voltage of -20 to +20 volts.
- Meets MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, and J-STD-020 standards.
Product Description
DiodesZetex ZXMHC3A01T8TA is a full bridge power MOSFET device combining 4 Type P and Type N channels in an enhancement mode configuration. Designed for surface mount PCB assembly, this compact 8-pin MOSFET supports a continuous drain current of 3.1 amperes and withstands a maximum drain-source voltage of 30 volts.
This device exhibits a low on-resistance of 330 milliohms which minimizes power losses and heat generation. Its maximum power dissipation rating is 1.7 watts, ensuring reliable performance in demanding environments with operating temperatures ranging from -55 degrees Celsius up to +150 degrees Celsius. The typical gate charge at a given gate-source voltage is 3.9 nanocoulombs and it supports a wide maximum gate-source voltage swing of -20 to +20 volts.
The physical dimensions of the MOSFET are 6.7 mm in length, 3.7 mm in width, and 1.6 mm in height, making it suitable for compact electronic designs. It complies with multiple industry standards including MIL-STD-202 for environmental testing, UL 94V-0 for flammability, RoHS for hazardous substances, AEC-Q101 automotive quality certification, and J-STD-020 for moisture sensitivity classification.
This MOSFET is ideal for industrial, electronic manufacturing, automotive, and power electronics applications requiring efficient switching and amplification. Its full bridge transistor configuration with four elements per chip allows for versatile circuit implementations in power management and control systems.
Enhancement mode transistor configuration with full bridge design. Surface mounted 8-pin package for space-saving PCB integration. Low drain-source resistance reduces conduction losses. High power dissipation capability supports robust operation.
Wide temperature range enables use in harsh conditions. Compact and lightweight component dimensions. Multiple certifications ensure safety and reliability. Four transistor elements per chip for versatile circuit design.
Explore EnvMart’s Electronics & Electricals category for a broad selection of Power MOSFETs suitable for various industrial and commercial applications. Enhance your electronic designs with reliable components like the DiodesZetex ZXMHC3A01T8TA.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 amperes.
It can withstand a maximum drain-source voltage of 30 volts.
The typical gate charge is 3.9 nanocoulombs.
The operating temperature range is from -55°C to +150°C.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.6 mm in height.
The maximum power dissipation rating is 1.7 watts.
It uses a full bridge transistor configuration with four elements per chip.
It complies with MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, and J-STD-020 standards.
The maximum gate-source voltage is -20 to +20 volts.
The maximum drain-source resistance is 330 milliohms.
This model is designed for surface mounting.
It has 8 pins.
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