DiodesZetex Isolated 2 N-Channel Power MOSFET, 7 A, 40 V, Enhancement Mode, 8-Pin SOIC DMN4031SSD-13

DiodesZetex DMN4031SSD-13 is an isolated dual N-channel power MOSFET designed for efficient power switching in industrial, automotive, and consumer electronics applications. It is housed in a compact 8-pin SOIC surface mount package with dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, optimizing PCB space and thermal performance.

This MOSFET supports a maximum continuous drain current of 7 A and a drain-source voltage of 40 V, making it well suited for medium power circuits. Its low maximum drain-source resistance of 50 milliohms minimizes conduction losses, enhancing overall efficiency. The device features an enhancement mode channel type providing controlled switching, and its typical gate charge of 8.4 nC enables rapid turn-on and turn-off, crucial for high-frequency switching applications.

Operating over a wide temperature range from -55°C to +150°C, the DMN4031SSD-13 complies with rigorous industry standards including AEC-Q101 for automotive qualification, RoHS for environmental safety, UL 94V-0 for flammability, and MIL-STD-202 for mechanical endurance. This makes it highly reliable in harsh environments and demanding use cases.

Applications for this MOSFET include automotive electronics, power management circuits, motor drivers, and other industrial systems requiring high reliability and efficient power handling. The isolated transistor configuration supports flexible circuit topology and reduces interference.

This device is designed for high efficiency power switching applications. It features a maximum drain-source resistance of 50 milliohms for minimal conduction losses. The maximum power dissipation is rated at 2.6 W, suitable for thermal management within compact electronics.

The MOSFET is rated for operating temperatures ranging from -55°C to +150°C. Typical gate charge is 8.4 nC at gate-source voltage, enabling fast switching capabilities. It includes robust standards compliance such as AEC-Q101, RoHS, UL 94V-0, and MIL-STD-202 for reliability and safety.

The compact package dimensions (4.95 mm length, 3.95 mm width, and 1.5 mm height) make it ideal for surface mount applications. Ideal for automotive and industrial uses requiring high performance and reliability. The transistor configuration is isolated dual N-channel, providing flexibility in circuit design.

Enhancement mode operation ensures controlled and safe device switching. Explore more in our Power MOSFET category for a broad selection of components to meet diverse electronic design needs.