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Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | SI2301CDS-T1-E3 |
| Width | 2.64mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 112mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
Key Features
- TrenchFET technology provides low switching and conduction losses.
- Supports a maximum continuous drain current of 3.1 amperes.
- Rated for a maximum drain-source voltage of 20 volts and gate-source voltage up to 8 volts.
- Compact surface-mount SOT-23 package with 3 pins for easy PCB integration.
- Operation temperature range from -55°C to 150°C ensures reliability in harsh conditions.
- Maximum power dissipation of 1 watt supports medium power applications.
- Enhancement mode P-channel MOSFET suitable for load switch applications in portable devices.
- Features halogen-free and lead-free construction complying with RoHS standards.
Product Description
The Vishay SI2301CDS-T1-E3 is a TrenchFET type P-channel enhancement-mode MOSFET designed for high efficiency and long life in modern electronics. With a maximum continuous drain current of 3.1 A and maximum drain-source voltage rating of 20 V, this device fits well in power management and load switching applications, especially for portable and compact devices.
Encased in a compact 3-pin SOT-23 surface-mount package, it simplifies integration into printed circuit boards where space saving is a priority. The device is optimized for low switching and conduction losses, offering excellent efficiency and performance in battery-operated equipment and power supply circuits.
Operating over a wide temperature range from -55°C up to 150°C, this MOSFET is suitable for industrial, consumer electronics, and automotive systems that require robustness. It supports a maximum gate-source voltage of ±8 V and features a low typical gate charge (10 nC) at standard operating voltages, which ensures efficient gate control with reduced energy loss.
Constructed with halogen-free and lead-free materials, it complies with environmental standards such as RoHS. This transistor is ideal for use as a load switch in portable devices and other applications requiring efficient and reliable power switching.
TrenchFET technology minimizes conduction and switching losses. Maximum continuous drain current of 3.1 A supports moderate power loads. Wide operating temperature range from -55°C to 150°C ensures durability. Compact SOT-23 package with 3 pins supports surface mounting.
Maximum gate-source voltage rating of ±8 V protects device operation. Typical gate charge of 10 nC reduces switching power consumption. Lead-free, halogen-free design meets modern environmental regulations. Optimized for load switch applications in portable electronic devices.
This Vishay MOSFET is perfectly suited for electronics manufacturing, industrial control, HVAC systems, battery-powered equipment, and automotive electronics, offering a blend of power efficiency and robust performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 amperes.
This MOSFET is rated for a maximum drain-source voltage of 20 volts.
It comes in a compact SOT-23 package with 3 pins, suitable for surface mounting.
The operating temperature range for this unit is from -55°C to 150°C.
The maximum gate-source voltage for this MOSFET is ±8 volts.
The typical gate charge at standard operating voltages is 10 nC.
It supports a maximum power dissipation of 1 watt.
This model features a P-channel type channel.
The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.
It is constructed with halogen-free and lead-free materials, complying with RoHS standards.
This model is suitable for load switch applications in portable devices and other power management needs.
The maximum drain-source resistance is 112 mΩ.
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