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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | ZVP2110GTA |
| Width | 3.55mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 310mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex ZVP2110GTA is a robust Type P-Channel MOSFET designed for discrete semiconductor applications requiring reliable switching at medium voltage levels. It features a 310mA maximum continuous drain current and a maximum drain-source voltage of 100V, suitable for a range of power management and control circuits. Packaged in a compact 4-pin SOT-223 surface mount housing, it offers easy PCB integration while ensuring stable electrical performance.
This enhancement mode MOSFET operates efficiently within a broad temperature range from -55°C to 150°C, enabling reliable use in automotive and industrial environments. The device boasts a low 8Ω maximum drain-source resistance which helps minimize power loss and improve energy efficiency. With a maximum power dissipation of 2 watts, it supports applications where thermal constraints are important.
The 1.5V forward voltage and AEC-Q101 automotive standard compliance further endorse this MOSFET's suitability for demanding automotive systems that require quality and reliability. Its small form factor of 6.55 mm length, 3.55 mm width, and 1.65 mm height allows compact circuit designs.
This device is ideal for various industrial, automotive, and power management applications requiring efficient switching and amplification capabilities. It offers quality and durability needed in stable semiconductor discrete component setups.
Type P channel enhancement mode transistor designed for surface mount applications. Maximum continuous drain current of 310 mA ensuring reliable current handling. Drain-source voltage rating of 100 V suitable for medium voltage switching.
Low maximum drain-source resistance of 8 ohms to reduce power loss. Maximum power dissipation of 2 W supporting efficient thermal management. Wide operating temperature range from -55°C to 150°C for robust use. Forward voltage of 1.5 V enhancing switching performance.
Complies with automotive standard AEC-Q101 indicating high reliability. Compact dimensions of 6.55 mm length, 3.55 mm width, and 1.65 mm height. Surface mount package type SOT-223 with 4 pins for easy PCB integration. Explore the wide range of MOSFET and semiconductor products from leading brands at EnvMart to support your electronics design and production requirements.
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