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DiodesZetex N-Channel Enhancement MOSFET 60 V 300 mA 150 mW 3-Pin SC-89 Package DMN601TK-7

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DiodesZetex N-Channel Enhancement MOSFET 60 V 300 mA 150 mW 3-Pin SC-89 Package DMN601TK-7

Name: DiodesZetex N-Channel Enhancement MOSFET 60 V 300 mA 150 mW 3-Pin SC-89 Package DMN601TK-7
Brand: DiodesZetex
SKU: 249443
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	0.8mm
Length	1.7mm
Model	DMN601TK-7
Width	0.85mm
Mount Type	Surface
Series	DMN601TK
Maximum Operating Temperature	150°C
Package Type	SC-89
Minimum Operating Temperature	-65°C
Pin Count	3
Automotive Standard	AEC-Q101, AEC-Q200, AEC-Q100
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

This MOSFET features an enhancement mode channel type for efficient switching.
Maximum continuous drain current of 300 mA ensures reliable performance.
Works within an operating temperature range from -65°C to 150°C.
Designed with a maximum drain-source resistance of 3 ohms for low power loss.
Compact package dimensions of 1.7 mm length, 0.85 mm width, and 0.8 mm height.
Surface mount type suitable for automated PCB assembly.
Maximum gate-source voltage rating is ±20 V.
Maximum power dissipation capped at 150 mW for thermal safety.

Product Description

DiodesZetex DMN601TK-7 is a high-performance N-Channel MOSFET designed for low voltage switching applications. The device uses enhancement mode channel operation and supports a maximum continuous drain current of 300 mA at a drain-source voltage of 60 V.

Housed in a compact 3-pin SC-89 surface mount package, this MOSFET is ideal for high-density electronic circuits where space saving is critical. Its compact dimensions - 1.7 mm length, 0.85 mm width, and 0.8 mm height - allow for efficient PCB layout and automated soldering processes.

The device is engineered to operate across a wide temperature range from -65°C to 150°C, making it suitable for industrial and automotive environments that require robustness against thermal stress. The maximum gate-source voltage rating of ±20 V offers protection against voltage spikes commonly encountered in switching circuits.

The DMN601TK-7 MOSFET features a low maximum drain-source resistance (Rds) of 3 ohms, ensuring minimal power dissipation during operation, with a maximum power dissipation rating of 150 mW. This specification helps reduce heat generation and improve overall circuit efficiency.

This product meets strict automotive standards including AEC-Q101, AEC-Q200, and AEC-Q100, which ensures reliability and durability in automotive systems and other demanding industrial applications.

This MOSFET features an enhancement mode channel type for efficient switching. Maximum continuous drain current of 300 mA ensures reliable performance. Works within an operating temperature range from -65°C to 150°C. Designed with a maximum drain-source resistance of 3 ohms for low power loss.

Compact package dimensions of 1.7 mm length, 0.85 mm width, and 0.8 mm height. Surface mount type suitable for automated PCB assembly. Maximum gate-source voltage rating is ±20 V. Maximum power dissipation capped at 150 mW for thermal safety.

Complies with automotive standards AEC-Q101, AEC-Q200, and AEC-Q100.

The DiodesZetex DMN601TK-7 is well suited for use in consumer electronics, industrial control systems, and automotive electronics requiring efficient switching and reliability. The compact form factor and automotive qualifications make it a versatile choice across multiple sectors.

Explore the extensive range of MOSFETs available on EnvMart for diverse electronic component needs.