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DiodesZetex N-Channel MOSFET 3.8 A, 30 V Enhancement Mode, 3-Pin SOT-23 DMN3110S-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN3110S-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features enhancement mode operation for reliable switching performance.
- It supports a maximum power dissipation of 1.8 W for moderate load applications.
- The device exhibits a low maximum drain-source resistance of 110 mΩ to reduce conduction losses.
- The maximum gate-source voltage ranges between -20 V and +20 V, ensuring robust gate control.
- Minimum operating temperature extends down to -55°C, suitable for harsh environments.
- Maximum operating temperature is rated at 150°C for thermal stability.
- The typical gate charge is low at 4.1 nC at Vgs, enabling efficient switching.
- This MOSFET complies with automotive standard AEC-Q101 for automotive grade use.
Product Description
DiodesZetex DMN3110S-7 N-Channel MOSFET is designed to provide efficient switching and control in electronic circuits requiring up to 3.8 A continuous drain current and 30 V drain-source voltage. Packaged in a compact 3-pin SOT-23 surface mount package, it is well suited for high-density PCB assemblies.
Operating in enhancement mode, this device offers a maximum drain-source resistance of 110 milliohms, which minimizes power loss and heat generation during conduction. It supports a maximum power dissipation of 1.8 W, making it suitable for moderately demanding power applications.
The gate-source voltage tolerance ranges from -20 V to +20 V, which provides robust control margin for gate drive circuits. With a typical gate charge of only 4.1 nC at Vgs, the DMN3110S-7 ensures fast switching times and reduced switching losses, improving overall circuit efficiency.
Its operating temperature range from -55°C to 150°C accommodates applications in varied environments, including automotive and industrial equipment. Compliance with the automotive AEC-Q101 standard confirms its reliability for automotive applications.
The device dimensions are compact: 3 mm length, 1.4 mm width, and 1 mm height, optimized for surface mount technology, facilitating automated production and space-constrained designs.
Enhancement mode N-Channel MOSFET provides efficient switching. Maximum continuous drain current of 3.8 A supports medium power loads. Low on-resistance of 110 mΩ reduces conduction losses. Maximum drain-source voltage of 30 V suits low-voltage circuits.
Wide operating temperature range from -55°C to 150°C. Typical gate charge of 4.1 nC enables fast switching. Packaged in small 3-pin SOT-23 for surface mounting. Complies with automotive standard AEC-Q101 ensuring ruggedness.
This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring compact and reliable switching components. It can be used in power management circuits, load switching, and other semiconductor switching applications.
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Frequently Asked Questions
The maximum continuous drain current for the DMN3110S-7 is 3.8 A.
This MOSFET can handle a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 1.8 W.
The typical gate charge at Vgs is 4.1 nC.
The maximum gate-source voltage ranges from -20 V to +20 V.
The dimensions of this MOSFET are 3 mm in length, 1.4 mm in width, and 1 mm in height.
The minimum operating temperature is -55°C and the maximum operating temperature is 150°C.
This model uses a 3-pin SOT-23 surface mount package.
It complies with the automotive standard AEC-Q101.
The maximum drain-source resistance is 110 mΩ.
This MOSFET is suitable for applications in power management circuits, load switching, and various semiconductor switching applications.
This model features an N-channel type.
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