DiodesZetex P-Channel MOSFET 30 V, 2 A, Enhancement Mode, 3-Pin SOT-23 DMG2307L

DiodesZetex DMG2307L is a P-Channel MOSFET designed for surface mount use in compact electronic circuits. With a maximum continuous drain current of 2 A and a maximum drain-source voltage of 30 V, it is suitable for switching and amplification applications in power management and discrete semiconductor circuits.

The device features a 3-pin SOT-23 package, providing a small footprint ideal for space-constrained industrial and automotive electronic designs. Its enhancement mode channel operates with low conduction losses due to a maximum drain-source resistance of 134 milliohms, enhancing energy efficiency in electronic systems.

The MOSFET supports a wide operating temperature range from -55°C up to 150°C, ensuring reliability in harsh industrial, automotive, and commercial environments. Additionally, the typical gate charge of 4 nanocoulombs facilitates fast switching performance, which is critical in high-frequency applications.

With a power dissipation rating of 1.9 watts, this MOSFET is capable of handling moderate power loads without significant thermal stress. It complies with automotive industry standard AEC-Q101, ensuring the product meets stringent quality and reliability requirements.

Compact dimensions (3 mm length, 1.4 mm width, 1 mm height) enable its use in miniature circuit designs. The gate-source voltage rating from -20 V to +20 V offers versatile control options for different circuit requirements.

Typical applications include industrial controls, automotive electronics, power management systems, and general-purpose amplification in electronic devices. The manufacturing origin is China, reflecting quality and consistency for global supply chains.

Compact 3-pin SOT-23 surface-mount package for efficient PCB integration. Enhancement mode channel providing reliable switching characteristics. Low maximum drain-source resistance of 134 milliohms for energy efficiency.

Wide operating temperature range from -55°C to 150°C for industrial reliability. Typical gate charge of 4 nanocoulombs ensures fast switching. Maximum power dissipation of 1.9 W supports robust performance. Compliant with automotive AEC-Q101 standards.

Small physical size with length 3 mm, width 1.4 mm, height 1 mm. Operating gate-source voltage from -20 V to +20 V. Manufactured in China with quality control. For further information and to explore similar high-quality semiconductor components, view more products and detailed datasheets at EnvMart.