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DiodesZetex Isolated 2 Type P, Type N-Channel Power MOSFET, 620 mA, 60 V Enhancement, 6-Pin SOT-563 DMG1029SV-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | DMG1029SV-7 |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-563 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 620mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 0.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
| Transistor Configuration | Isolated |
Key Features
- This device features a dual N/P-channel MOSFET configuration suitable for various electronic applications.
- The package type is compact SOT-563 with 6 pins, optimized for surface mounting.
- Maximum power dissipation is rated at 1 W ensuring reliable thermal performance.
- Operating temperature ranges from -55°C to +150°C, making it suitable for automotive and industrial environments.
- Maximum drain-source resistance is 6 ohms, providing efficient conduction.
- Typical gate charge is 0.3 nC at specified gate voltage, supporting fast switching.
- The product conforms to multiple industry standards including J-STD-020, MIL-STD-202, AEC-Q101, RoHS, and UL 94V-0.
- Size dimensions are compact with length 1.7 mm, width 1.25 mm, and height 0.6 mm.
Product Description
DiodesZetex DMG1029SV-7 is an isolated dual N/P-channel Power MOSFET designed for efficient power management in electronics. With a maximum continuous drain current of 620 mA and a maximum drain-source voltage of 60 V, this component supports enhancement mode operation that is ideal for switching and amplification in various circuits.
The compact SOT-563 package with 6 pins and surface mount technology ensures ease of integration into high-density PCB layouts. The MOSFET exhibits a maximum power dissipation of 1 watt, and a low maximum drain-source resistance of 6 ohms, delivering effective performance with minimal thermal loss.
Designed to operate reliably across a broad temperature range from -55°C to +150°C, this MOSFET is suitable for demanding industrial, automotive, and commercial electronics environments. The maximum gate-source voltage of ±20 V and typical gate charge of 0.3 nC supports rapid switching and control precision.
The device is manufactured according to rigorous standards including J-STD-020, MIL-STD-202, AEC-Q101 automotive qualification, RoHS compliance for environmental safety, and UL 94V-0 flammability rating enhancing its suitability for critical applications.
Its dimensions are precisely 1.7 mm in length, 1.25 mm in width, and 0.6 mm in height, making it an excellent choice for compact circuit designs. The transistor configuration is isolated, providing electrical separation between the two MOSFET channels, enhancing performance in complex applications.
This MOSFET features two isolated N/P channels for versatile power switching. Compact 6-pin SOT-563 surface mount package reduces PCB footprint. Supports continuous drain current up to 620 mA with 60 V voltage rating. Wide operating temperature range from -55°C to +150°C for durability.
Low on-resistance and 1 W maximum power dissipation for efficient thermal management. Compliant with automotive and industrial standards including AEC-Q101. Ideal for industrial, automotive, and consumer electronics applications requiring efficient power management.
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Frequently Asked Questions
The maximum continuous drain current for the DMG1029SV-7 is 620 mA.
This model has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation for this MOSFET is rated at 1 W.
The dimensions of this MOSFET are 1.7 mm in length, 1.25 mm in width, and 0.6 mm in height.
It operates within a temperature range of -55°C to +150°C.
The typical gate charge is 0.3 nC at the specified gate voltage.
The maximum gate-source voltage is ±20 V.
This device uses a compact SOT-563 package with 6 pins, optimized for surface mounting.
It conforms to multiple standards including J-STD-020, MIL-STD-202, AEC-Q101, RoHS, and UL 94V-0.
The maximum drain-source resistance is rated at 6 ohms.
The DMG1029SV-7 features an isolated dual N/P-channel configuration.
This model is suitable for various electronic applications, particularly in industrial, automotive, and consumer electronics requiring efficient power management.
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