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onsemi Dual 2 N-Channel Power MOSFET 127 A 40 V Enhancement 8-Pin DFN NVMFD5C446NT1G
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | NVMFD5C446NT1G |
| Width | 6.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 127A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Dual |
Key Features
- Features an 8-pin DFN package suitable for surface mounting.
- Built with enhancement mode channel type for efficient switching.
- Typical gate charge of 38 nC at Vgs ensures fast response.
- Can operate in temperature ranges from -55°C to +175°C.
- Power dissipation rated up to 89 W supports high power applications.
- Low maximum drain-source resistance of 2.9 milliohms reduces conduction losses.
- Complies with automotive standard AEC-Q101 ensuring reliability.
- Dual transistor configuration with 2 elements per chip.
Product Description
onsemi NVMFD5C446NT1G is a Dual 2 N-Channel Power MOSFET rated for 127 A maximum continuous drain current and 40 V maximum drain-source voltage. Housed in a compact 5.1 mm by 6.1 mm 8-pin DFN package with a height of 1.05 mm, this surface-mount device is engineered for high efficiency and reliable performance in automotive and industrial environments.
This MOSFET utilizes enhancement mode channel technology and offers a low maximum drain-source resistance of 2.9 milliohms, minimizing conduction losses and enhancing load handling. Its typical gate charge of 38 nC at Vgs and maximum gate-source voltage of 20 V facilitate fast and reliable switching. The device supports a broad operating temperature range from -55°C to +175°C, making it suitable for harsh conditions.
The part complies with AEC-Q101 automotive standards and features a wettable flank option for enhanced optical inspection, ensuring robust quality control in production. Its dual transistor configuration with two elements per chip is optimized for compact and efficient circuit designs. Power dissipation capability up to 89 W enables it to handle demanding power loads effectively.
Common applications include solenoid drivers, low side and high side drivers, automotive engine control units, and antilock braking systems. This MOSFET is ideal for automotive systems requiring high current capacity and reliability.
8-pin DFN surface-mount package enhances compactness. Low Rds(on) reduces power loss and improves efficiency. Wide operating temperature range suits automotive and industrial use. Dual transistor design supports versatile driving applications.
Automotive grade with AEC-Q101 certification ensures quality and durability. Wettable flank option supports enhanced optical inspection process. High maximum power dissipation allows robust performance. Low gate charge enables fast switching characteristics.
Designed for safety against voltage overstress failures. Optimal for use in solenoid and motor drivers in vehicles. Explore more on electronic discrete semiconductors at EnvMart to find reliable Power MOSFETs and related components for automotive and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 127 A.
This MOSFET has a maximum drain-source voltage of 40 V.
It is housed in an 8-pin DFN package with dimensions of 5.1 mm in length, 6.1 mm in width, and a height of 1.05 mm.
The typical gate charge at Vgs for this MOSFET is 38 nC.
The maximum power dissipation capability is rated at 89 W.
The maximum gate-source voltage for this MOSFET is 20 V.
It features a low maximum drain-source resistance of 2.9 milliohms.
The operating temperature range for this MOSFET is from -55°C to +175°C.
This model complies with the AEC-Q101 automotive standard.
It utilizes an enhancement mode channel type for efficient switching.
The dual transistor configuration has 2 elements per chip.
Common applications include solenoid drivers, low side and high side drivers, automotive engine control units, and antilock braking systems.
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