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Vishay TrenchFET Type P-Channel MOSFET 50 A 30 V Enhancement 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 5.99mm |
| Model | SI7149ADP-T1-GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb)-Free |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.0052Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 43.1nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 0.74V |
Key Features
- Features enhancement mode channel operation for reliable switching performance.
- Maximum power dissipation rating of 48 W ensures efficient thermal management.
- Low on-resistance of 0.0052 ohms reduces conduction losses.
- Wide operating temperature range from -55°C to 150°C for diverse environments.
- Typical gate charge of 43.1 nC supports fast switching applications.
- Maximum gate-source voltage rated at ±25 V offers circuit protection.
- Lead (Pb)-free compliant design helps meet environmental standards.
- Manufactured in China maintaining consistent quality standards.
Product Description
Vishay SI7149ADP-T1-GE3 is a TrenchFET type P-channel MOSFET designed for high-performance power switching applications. It supports a maximum continuous drain current of 50 A at 30 V drain-source voltage, packaged in an 8-pin PowerPAK SO-8 surface-mount format which provides low thermal resistance and a compact footprint.
Operating on enhancement channel mode, this MOSFET delivers an exceptionally low drain-source resistance of 0.0052 ohms, enhancing efficiency by reducing conduction losses during operation. The device can dissipate power up to 48 W, making it suitable for demanding industrial and electronic power management systems.
It features a typical gate charge of 43.1 nC at Vgs, facilitating fast switching speeds for modern electronic designs. Gate-source voltage tolerance is rated at ±25 V, offering robustness against transient voltage spikes.
Built to withstand harsh conditions, the MOSFET operates reliably across a broad temperature span from -55°C to 150°C. Its compact dimensions (5.99 mm length, 5 mm width, 1.07 mm height) allow integration into dense circuit layouts commonly found in telecommunications, automotive electronics, and industrial automation.
This product is lead (Pb)-free, supporting compliance with environmental regulations. It is manufactured in China under Vishay’s quality assurance standards. Enhancement mode channel for reliable switching. Low Rds(on) for efficient conduction.
High maximum power dissipation rating. Wide temperature operation range. Fast switching due to low gate charge. Robust gate voltage tolerance. Compact PowerPAK SO-8 package. Lead (Pb)-free environmental compliance. Manufactured in China with quality assurance.
This MOSFET is widely used in industrial electronic circuits, power management, automotive systems, and telecommunications equipment. It supports efficient power switching, contributes to energy savings, and enhances the reliability of electronic devices. EnvMart offers this component to support advanced electronic design and prototype development projects.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI7149ADP-T1-GE3 is 50 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation rating is 48 W, allowing for efficient thermal management.
It features a low on-resistance of 0.0052 ohms, which reduces conduction losses during operation.
The typical gate charge at Vgs is 43.1 nC, supporting fast switching applications.
The MOSFET operates reliably across a wide temperature range from -55°C to 150°C.
This model is packaged in an 8-pin PowerPAK SO-8 format, which provides low thermal resistance.
The maximum gate-source voltage is rated at ±25 V, which offers protection against transient voltage spikes.
The dimensions are 5.99 mm in length, 5 mm in width, and 1.07 mm in height.
Yes, it is lead (Pb)-free compliant, helping to meet environmental standards.
This MOSFET is widely used in industrial electronic circuits, power management, automotive systems, and telecommunications equipment.
It operates on an enhancement mode channel, which is designed for reliable switching performance.
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