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Vishay N-Channel MOSFET 12 A, 30 V, Enhancement Mode, 6-Pin SOT-363 Package SIA462DJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 2.15mm |
| Model | SIA462DJ-T1-GE3 |
| Width | 2.15mm |
| Mount Type | Surface |
| Series | SiA462DJ |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb)-Free |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.018Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode channel designed for surface mount applications.
- Maximum drain-source resistance of 0.018 ohms ensures efficient switching.
- Typical gate charge of 17 nC at gate-source voltage for fast switching performance.
- Operates reliably from -55°C to 150°C for wide industrial temperature use.
- Maximum power dissipation of 19 W for robust power handling.
- Lead (Pb)-free construction for environmental compliance.
- Suitable for power management and electronic switching applications.
Product Description
Vishay SIA462DJ-T1-GE3 is an N-Channel Enhancement Mode MOSFET designed for efficient power control with a maximum continuous drain current of 12 A and a drain-source voltage rating of 30 V. Packaged in a compact 6-pin SOT-363 surface mount package with dimensions 2.15 mm x 2.15 mm x 0.8 mm, it supports high-efficiency switching in dense electronic assemblies.
This component features a low maximum drain-source resistance (Rds) of 0.018 Ω, which minimizes conduction losses under load, enhancing overall power efficiency. The typical gate charge of 17 nC enables fast switching suitable for high-frequency applications.
The device operates reliably over wide temperatures ranging from -55°C to 150°C, making it suitable for industrial, commercial, and automotive electronics that require thermal robustness. Its maximum power dissipation rating is 19 W, supporting demanding power handling in compact spaces.
Lead (Pb)-free manufacturing meets environmental regulations compliance. The MOSFET is well-suited for power management, electronic switching, and amplification functions in a variety of electronic circuit designs.
Enhancement mode N-Channel MOSFET optimized for surface mount technology. Max continuous drain current of 12 A for high current applications. Rated for 30 V drain to source voltage ensuring device protection. Low Rds(on) means minimal power loss during operation.
Wide temperature operability from -55°C to 150°C allows flexibility. Compact SOT-363 6-pin package enables high-density PCB layouts. Lead (Pb)-free construction for RoHS compliance and environmental safety. Applications include industrial controls, power supplies, and automotive electronics.
Explore a wide range of MOSFETs and semiconductors on EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the SIA462DJ-T1-GE3 is 12 A.
This MOSFET has a drain-source voltage rating of 30 V.
The maximum power dissipation for this model is 19 W.
It is packaged in a compact 6-pin SOT-363 surface mount package.
The dimensions of this model are 2.15 mm x 2.15 mm x 0.8 mm.
The typical gate charge at gate-source voltage is 17 nC.
The maximum drain-source resistance (Rds) is 0.018 Ω.
This MOSFET operates reliably from -55°C to 150°C.
Yes, it features lead (Pb)-free construction for environmental compliance.
It is suitable for power management, electronic switching, and amplification functions in various electronic circuit designs.
The maximum gate-source voltage (Vgs) is -20V to +20V.
This model has an N-channel enhancement mode.
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