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Vishay Isolated Dual N and P-Channel MOSFET 6.8 A, 40 V Enhancement Mode 8-Pin SOIC SI4599DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4599DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4599DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC JS709A, RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 6.8A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.045Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- This device features an 8-pin SOIC package ideal for surface mount applications.
- Operates in enhancement mode with a maximum gate-source voltage range of -20 V to +20 V.
- Supports maximum power dissipation of 3.1 W and maximum operating temperature of 150°C.
- Designed with a low drain-source resistance of 0.045 Ω for efficient switching.
- Typical gate charge at Vgs is 25 nC facilitating fast switching performance.
- Complies with JEDEC JS709A and RoHS standards ensuring quality and environmental safety.
- Isolated transistor configuration with dual elements per chip for versatile circuit designs.
Product Description
Vishay SI4599DY-T1-GE3 is an isolated dual N and P-channel MOSFET designed for electronic applications requiring efficient switching and power management. Rated for a maximum continuous drain current of 6.8 A and a drain-source voltage of 40 V, it supports enhancement mode operation with a wide gate-source voltage range (-20 V to +20 V), making it adaptable for various circuit configurations.
Housed in a compact 8-pin SOIC surface mount package, this MOSFET maintains low on-resistance (0.045 Ω) to minimize power loss and heat generation. It can operate at temperatures up to 150°C, suitable for demanding industrial and electronic environments.
The device features a typical gate charge of 25 nC, enabling rapid switching performance essential for high-frequency power electronics. Compliance with JEDEC JS709A and RoHS certifications ensures reliability and adherence to environmental standards.
The isolated transistor configuration includes two elements per chip (N and P-channel), providing enhanced functionality for complex circuit designs in industrial electronics, power supply systems, and electronic component manufacturing.
Physical dimensions are compact: 5 mm in length, 4 mm in width, and 1.55 mm in height, facilitating dense electronic assembly. Isolated dual N and P-channel configuration supports diverse applications. Efficient power handling with 3.1 W maximum dissipation.
Surface mount 8-pin SOIC package for easy PCB integration. Wide operating temperature range from -55°C to 150°C ensures durability. Low gate charge aids in fast switching and reduced power loss. Conforms to JEDEC JS709A and RoHS standards for quality assurance.
This product is ideal for use in industrial electronics, power management modules, manufacturing processes, and electronic component assembly. Browse more semiconductor devices and MOSFETs on EnvMart for your next project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.8 A.
It supports a maximum drain-source voltage of 40 V.
The gate-source voltage range is from -20 V to +20 V.
The physical dimensions of this model are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The maximum power dissipation for this device is 3.1 W.
The typical gate charge at Vgs is 25 nC.
It is housed in an 8-pin SOIC surface mount package.
The operating temperature range is from -55°C to 150°C.
This model features dual N and P-channel configuration.
It complies with JEDEC JS709A and RoHS standards.
The low drain-source resistance of 0.045 Ω helps minimize power loss and heat generation during operation.
This MOSFET is suitable for industrial electronics, power management modules, and electronic component manufacturing.
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