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Nexperia Isolated Trench Dual N-Channel MOSFET 320 mA 60 V Enhancement 6-Pin SC-88 BSS138PS,115

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model BSS138PS,115
Width 1.35mm
Mount Type Surface
Series Trench MOSFET
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 320mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.6Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 320mW
Typical Gate Charge Qg @ Vgs 0.72nC
Maximum Gate Source Voltage Vgs -20, +20V
Transistor Configuration Isolated

Key Features

  • Dual isolated trench N-Channel MOSFET configuration for efficient switching.
  • Maximum continuous drain current of 320 mA suitable for low power applications.
  • Maximum drain source voltage rating is 60 V for robust electrical handling.
  • Surface mount device in compact 6-pin SC-88 package reducing PCB footprint.
  • Enhancement mode operation providing normally off transistor function.
  • Maximum drain source resistance of 1.6 ohms ensuring low conduction losses.
  • Gate charge of 0.72 nC at typical gate voltage ensures fast switching performance.
  • Wide operating temperature range from -55°C up to +150°C for reliability in harsh environments.

Product Description

Nexperia BSS138PS,115 is a dual isolated trench N-Channel MOSFET designed for efficient electronic switching and amplification. Its maximum continuous drain current of 320 mA and maximum drain source voltage of 60 V make it suitable for low power electronic circuits requiring reliable performance.

This MOSFET features an enhancement mode operation and a maximum drain source resistance of 1.6 Ω, resulting in low conduction losses during operation. It is housed in a compact 6-pin SC-88 surface mount package, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it ideal for miniaturized electronic designs.

The transistor supports a maximum power dissipation of 320 mW and a typical gate charge of 0.72 nC at Vgs, ensuring efficient and fast switching capability. It operates reliably over a wide temperature range from -55°C to +150°C, suitable for industrial, automotive, and consumer electronics applications.

Certified to the automotive standard AEC-Q101, this component is fit for use in automotive environments requiring high reliability and durability. The device includes two elements per chip within the isolated transistor configuration, offering enhanced performance characteristics.

Dual isolated trench N-Channel MOSFET design providing efficient switching. Maximum drain current of 320 mA suitable for compact low power circuits. Continuous voltage rating of 60 V ensuring protection against voltage spikes.

Compact 6-pin SC-88 surface mount package facilitates high-density PCB layouts. Enhancement mode transistor operation provides normally off state for energy efficiency. Low on-resistance of 1.6 Ω for minimal power loss. Fast switching with typical gate charge of 0.72 nC.

Wide operating temperature from -55°C to +150°C for diverse applications. Automotive standard AEC-Q101 qualified for automotive and industrial use. Small form factor dimensions: Length 2.2 mm, Width 1.35 mm, Height 1 mm.

This MOSFET is widely used in industrial controls, automotive electronics, power management, and consumer electronic devices. Its high voltage and current ratings combined with a compact footprint provide designers an optimal solution for efficient electronic switching.

Explore the range of Nexperia semiconductor components on EnvMart for quality and performance in your electrical and electronic engineering projects.

Explore more products in our MOSFETs category.

Nexperia Isolated Trench Dual N-Channel MOSFET 320 mA 60 V Enhancement 6-Pin SC-88 BSS138PS,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 320 mA, making it suitable for low power applications.

This MOSFET has a maximum drain source voltage rating of 60 V, which provides robust electrical handling capabilities.

The SC-88 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for compact PCB layouts.

The typical gate charge at Vgs is 0.72 nC, ensuring fast switching performance for this MOSFET.

The maximum power dissipation for this MOSFET is 320 mW, suitable for efficient electronic circuits.

This model features a maximum drain source resistance of 1.6 Ω, which helps minimize conduction losses during operation.

It operates reliably over a wide temperature range from -55°C to +150°C, making it suitable for harsh environments.

This MOSFET is certified to the automotive standard AEC-Q101, indicating its suitability for automotive applications.

This MOSFET includes two elements per chip within its isolated transistor configuration, enhancing its performance characteristics.

This model features a dual isolated trench N-Channel MOSFET configuration, designed for efficient switching.

The channel mode of this MOSFET is enhancement, providing a normally off state for improved energy efficiency.

It is a surface mount device, which facilitates high-density PCB layouts in electronic designs.

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