Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

Vishay SI4564DY-T1-GE3 isolated TrenchFET dual channel MOSFET provides both N-channel and P-channel types with an 8 A continuous drain current and a 40 V maximum drain-source voltage. Designed in a compact 8-pin SOIC surface mount package, it offers enhanced switching capabilities with an enhancement mode channel configuration.

This MOSFET is suitable for industrial, laboratory, and electronic applications requiring efficient power switching in compact form factors. Its isolated transistor configuration allows for improved circuit isolation and safety. The device supports a wide operating temperature range from -55°C up to +150°C, ensuring reliable performance under high thermal stress.

The device features a low maximum drain-source resistance of 20 milliohms, minimizing conduction losses and improving energy efficiency. With a typical gate charge of 20.5 nC, it supports fast switching speeds essential for high-frequency circuits. The maximum power dissipation rating of 3.2 W allows moderate power handling capability.

Physically, this MOSFET is compact with dimensions of 5 mm length, 4 mm width, and 1.55 mm height, making it suitable for space-constrained PCB layouts. The transistor contains two elements per chip, delivering dual channel types in one package. It conforms to industry standards, though it carries no specific automotive certification and is manufactured in China.

Dual N-channel and P-channel configuration enables versatile applications. 8 A maximum continuous drain current supports power-demanding loads. Low on-resistance enhances efficiency and minimizes heat dissipation. Surface mount SOIC package with 8 pins for efficient PCB assembly.

Wide operating temperature range from -55°C to +150°C for harsh environments. Typical gate charge of 20.5 nC allows fast switching performance. Maximum power dissipation of 3.2 W manages thermal loads effectively. Isolated transistor design optimizes electrical safety and interference reduction.

Compact size ensures suitability for space-limited applications. Manufactured in China with no automotive certification.

Ideal for industrial, electronic manufacturing, and research laboratory use, this MOSFET meets the evolving needs for efficient, reliable power management components. Explore more Vishay semiconductor components and MOSFETs within the EnvMart catalog to find tailored solutions for your electronic design projects.