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Vishay IRFZ N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220 IRFZ40PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.65mm |
| Length | 10.52mm |
| Model | IRFZ40PBF |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | IRFZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
Key Features
- This MOSFET is suitable for through-hole mounting applications.
- It features a maximum drain-source resistance of 28 milliohms for efficient switching.
- The device supports a maximum power dissipation of 150 W, supporting high power operation.
- Operates reliably across a temperature range from -55°C to 175°C.
- Typical gate charge is 67 nC, enabling fast switching.
- Maximum gate-source voltage rating is ±20 V, ensuring stable gate control.
- This component is manufactured in China with no automotive standard certification.
Product Description
The Vishay IRFZ40PBF is an N-Channel enhancement mode MOSFET transistor designed for electronic power control applications. Rated for a maximum continuous drain current of 50 A and a maximum drain-source voltage of 60 V, this device provides robust switching capabilities in a compact 3-pin TO-220 package suitable for through-hole mounting.
Its low drain-source resistance of 28 milliohms minimizes power loss, improving efficiency in power management circuits. The typical gate charge of 67 nC allows for efficient and fast gate drive switching, while a maximum gate-source voltage tolerance of ±20 V ensures reliable operation in stringent electrical environments.
The MOSFET can dissipate up to 150 W of power and functions effectively within an operational temperature range of -55°C to 175°C, accommodating demanding industrial and commercial electronics environments.
Physical dimensions of 10.52 mm length, and 4.65 mm width and height, make this component compact and easy to integrate into various PCB layouts. Its robust design is suited for applications in power electronics, motor control, switching regulators, and general-purpose electronics requiring reliable power transistors.
This MOSFET supports through-hole mounting. It is part of the IRFZ series known for power efficiency. Suitable for industrial, laboratory, and manufacturing electronic power control. Compact TO-220 form factor facilitates easy installation.
Operates with high temperature and power ranges for versatile use. Explore Vishay MOSFET offerings at EnvMart for reliable semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The IRFZ40PBF can dissipate up to 150 W of power.
The typical gate charge for this MOSFET is 67 nC.
This model has dimensions of 10.52 mm in length, 4.65 mm in width, and 4.65 mm in height.
The maximum gate-source voltage rating for this MOSFET is ±20 V.
The maximum drain-source resistance is 28 milliohms, which aids in efficient switching.
This MOSFET operates reliably within a temperature range of -55°C to 175°C.
This model supports through-hole mounting applications.
The channel type of this MOSFET is N-channel enhancement mode.
The IRFZ40PBF is packaged in a TO-220 format.
This MOSFET is suitable for applications in power electronics, motor control, and switching regulators.
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