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Vishay P-Channel MOSFET 30 V, 5.9 A, Enhancement Mode, 3-Pin SOT-23 SI2343CDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2343CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2343CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.045Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 5.9 A enables efficient power handling.
- Operational voltage of up to 30 V for diverse electronic applications.
- Low maximum drain-source resistance (Rds) of 0.045 ohms reduces conduction losses.
- Compact SOT-23 package with three pins facilitates PCB surface mounting.
- Supports a maximum power dissipation of 2.5 W ensuring thermal reliability.
- Wide operating temperature range from -55°C to 150°C for robust performance.
- Typical gate charge of 7 nC at Vgs optimizes switching efficiency.
- Meets IEC 61249-2-21 and RoHS 2002/95/EC standards for quality and compliance.
Product Description
Vishay SI2343CDS-T1-GE3 is a P-Channel MOSFET featuring a maximum drain-source voltage of 30 V and continuous drain current capability of 5.9 A. It utilizes an Enhancement mode channel and comes in a compact 3-pin SOT-23 surface-mount package, making it ideal for modern electronic circuit assemblies.
This MOSFET exhibits a low maximum drain-source resistance (Rds) of 0.045 ohms which minimizes power loss and heat generation, supporting efficient power management in applications. It is capable of dissipating up to 2.5 W of power and operates reliably across a broad temperature range of -55°C to 150°C, appropriate for industrial, consumer electronics, and automotive use cases.
The device’s typical gate charge of 7 nC ensures responsive switching performance, and its forward voltage rating of 1.2 V reduces voltage drop across the device during conduction phases. Compliance with IEC 61249-2-21 and RoHS 2002/95/EC guarantees adherence to recognized environmental and quality standards.
With dimensions of approximately 3.04 mm length, 1.4 mm width, and 1.02 mm height, this MOSFET is optimized for compact PCB layouts without sacrificing electrical performance. Its 3-pin config supports easy integration and stable electrical connections.
Applications include power management, signal switching, amplification, and load switching in industrial tools, HVAC systems, manufacturing controls, and embedded electronic devices requiring reliable semiconductor performance.
Maximum continuous drain current of 5.9 A enabled by enhancement mode conduction. Voltage handling of up to 30 V suitable for low voltage power circuits. Low resistance Rds(on) for energy-efficient switching. Compact SOT-23 package designed for surface mounting on PCBs.
Wide operating temperature range -55°C to 150°C supports harsh environments. Compliance with IEC and RoHS standards. Forward voltage of 1.2 V reduces conduction losses. Typical gate charge optimizes switching speed and efficiency.
This Vishay MOSFET combines robust electrical characteristics and compact form factor to meet demanding electronic component specifications. Browse additional semiconductor products and brands on EnvMart for comprehensive electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5.9 A.
It can handle a maximum drain-source voltage of 30 V.
This MOSFET supports a maximum power dissipation of 2.5 W.
The typical gate charge at Vgs is 7 nC, which optimizes switching efficiency.
The dimensions of the SOT-23 package are approximately 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It operates reliably across a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance (Rds) is 0.045 ohms, which reduces conduction losses.
This model supports surface mounting on PCBs.
It meets IEC 61249-2-21 and RoHS 2002/95/EC standards for environmental compliance.
The forward voltage rating is 1.2 V, which helps to reduce voltage drop during conduction.
This MOSFET is suitable for power management, signal switching, amplification, and load switching in various electronic devices.
It utilizes an enhancement mode P-channel type.
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