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Vishay N-Channel Enhancement MOSFET SOT-23, 30 V, 5.8 A, 42mΩ Rds(on), 2.1W Power Dissipation SI2366DS-T1-GE3

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Vishay N-Channel Enhancement MOSFET SOT-23, 30 V, 5.8 A, 42mΩ Rds(on), 2.1W Power Dissipation SI2366DS-T1-GE3

Name: Vishay N-Channel Enhancement MOSFET SOT-23, 30 V, 5.8 A, 42mΩ Rds(on), 2.1W Power Dissipation SI2366DS-T1-GE3
Brand: Vishay
SKU: 244846
Price: 0.32 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.02mm
Length	3.04mm
Model	SI2366DS-T1-GE3
Width	1.4mm
Mount Type	Surface
Series	Si2366DS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Interfaces	USB power-distribution and load switching Ideal for DC-DC converter output-stage use Used with battery-management and charging circuits Can be used for motor-driver low-side switching
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5.8A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	42mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.1W
Typical Gate Charge Qg @ Vgs	6.4nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.85V

Key Features

Maximum continuous drain current of 5.8 A ensures robust current handling.
Drain-source voltage rated at 30 V for low-voltage applications.
Low on-resistance of 42 milliohms minimizes conduction losses.
Power dissipation capacity of 2.1 W supports thermal-limited uses.
Compact 3-pin SOT-23 surface-mount package suitable for dense PCB assemblies.
Operates reliably across a temperature range of -55 °C to 150 °C.
Typical gate charge of 6.4 nC enables controlled switching energy.
Supports gate-source voltages from -20 V to +20 V for flexible drive options.

Product Description

Vishay SI2366DS-T1-GE3 is a high-performance N-channel enhancement MOSFET designed for surface-mount switching in low-voltage electronic circuits. With a maximum drain-source voltage of 30 V and continuous drain current capacity of 5.8 A, this device offers efficient conduction with a low on-state resistance of 42 milliohms, reducing conduction losses in power management applications.

The device is housed in a compact SOT-23 package with a 3-pin configuration, facilitating easy layout in space-constrained PCBs. It operates over a wide temperature range from -55 °C to 150 °C, making it suitable for demanding industrial and commercial electronic environments.

The MOSFET features a typical gate charge of 6.4 nC, supporting controlled energy switching and accepts gate-source voltages up to ±20 V, providing flexibility in drive voltages. Its forward voltage of 0.85 V further supports efficient drive operation. The power dissipation rating of 2.1 W accommodates thermal-limited applications.

Common use cases include USB power distribution switching, DC-DC converter output stages, battery-management systems, charging circuits, and low-side switching for motor drivers. This device is well-suited for consumer electronics power-rail protection and similar industrial applications.

Maximum continuous drain current of 5.8 A ensures robust current handling. Drain-source voltage rated at 30 V for low-voltage applications. Low on-resistance of 42 milliohms minimizes conduction losses. Power dissipation capacity of 2.1 W supports thermal-limited uses.

Compact 3-pin SOT-23 surface-mount package suitable for dense PCB assemblies. Operates reliably across a temperature range of -55 °C to 150 °C. Typical gate charge of 6.4 nC enables controlled switching energy. Supports gate-source voltages from -20 V to +20 V for flexible drive options.

Forward voltage of 0.85 V contributes to efficient drive conditions. Ideal for USB power distribution, DC-DC converters, battery management, and low-side motor switching. Explore Vishay semiconductor components and MOSFETs at EnvMart for reliable power management solutions.

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Frequently Asked Questions

The maximum continuous drain current of this model is 5.8 A, ensuring robust current handling capabilities.

This MOSFET has a maximum drain-source voltage rating of 30 V, making it suitable for low-voltage applications.

It features a low on-resistance of 42 milliohms, which minimizes conduction losses during operation.

The power dissipation capacity of this MOSFET is 2.1 W, supporting thermal-limited applications.

It operates reliably across a temperature range of -55 °C to 150 °C, suitable for various industrial environments.

The typical gate charge for the SI2366DS-T1-GE3 is 6.4 nC, enabling controlled switching energy.

This model is housed in a compact SOT-23 surface-mount package, which is suitable for dense PCB assemblies.

It supports gate-source voltages from -20 V to +20 V, providing flexibility in drive options.

The forward voltage of this MOSFET is 0.85 V, contributing to efficient drive conditions.

Common applications include USB power distribution, DC-DC converter output stages, battery-management systems, and low-side switching for motor drivers.