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Vishay TrenchFET Type P-Channel MOSFET, 8 A Continuous Drain Current, 12 V Drain Source Voltage, 6-Pin TSOP SI3477DV-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1mm
Length 3.1mm
Model SI3477DV-T1-GE3
Width 1.7mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 150°C
Package Type TSOP
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 33mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 4.2W
Typical Gate Charge Qg @ Vgs 58nC
Maximum Gate Source Voltage Vgs -10, +10V
Forward Voltage Vf -0.8V

Key Features

  • This MOSFET operates in enhancement mode for reliable switching performance.
  • It features a low maximum drain-source resistance of 33mΩ for efficient conduction.
  • The component supports a wide operating temperature range from -55° C to 150° C.
  • Maximum power dissipation is rated at 4.2 W for robust thermal performance.
  • Typical gate charge is 58nC at Vgs = 5 V to optimize switching speed.
  • Gate source voltage ratings are -10 V to +10 V to ensure safe control.
  • Forward voltage is -0.8 V, facilitating efficient conduction in circuits.
  • Compact physical dimensions measure 3.1 mm length, 1.7 mm width, and 1 mm height in TSOP package.

Product Description

Vishay SI3477DV-T1-GE3 is a TrenchFET Type P-Channel MOSFET designed for applications requiring a maximum continuous drain current of 8 A and a drain-source voltage of 12 V. Its enhancement-mode operation and low drain-source resistance of 33mΩ ensure efficient switching and conduction.

This MOSFET supports a broad temperature range, from a minimum of -55° C up to a maximum of 150° C, making it suitable for demanding industrial and commercial environments. It dissipates up to 4.2 W of power, offering reliable thermal performance under load.

The typical gate charge of 58nC at 5 V gate-source voltage enables fast switching and minimized power loss. The device's gate-source voltage limits of -10 V to +10 V provide safe and stable operation in power management circuits. The forward voltage rating is -0.8 V, supporting low voltage drops in circuitry.

Packaged in a compact 6-pin TSOP surface-mount package with dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height, the SI3477DV-T1-GE3 fits modern compact PCB designs and automated assembly lines.

This semiconductor is ideal for industrial, power management, and electronic device applications where efficient switching and robust thermal performance are critical. Its specifications suit use in power supplies, automotive electronics, and consumer devices.

This MOSFET operates in enhancement mode for reliable switching performance. It features a low maximum drain-source resistance of 33mΩ for efficient conduction. The component supports a wide operating temperature range from -55° C to 150° C.

Maximum power dissipation is rated at 4.2 W for robust thermal performance. Typical gate charge is 58nC at Vgs = 5 V to optimize switching speed. Gate source voltage ratings are -10 V to +10 V to ensure safe control. Forward voltage is -0.8 V, facilitating efficient conduction in circuits.

Compact physical dimensions measure 3.1 mm length, 1.7 mm width, and 1 mm height in TSOP package. Designed for surface mount applications to facilitate automated PCB assembly. Explore more discrete semiconductor devices and MOSFETs from Vishay in the Electronics & Electricals category at EnvMart.

Vishay TrenchFET Type P-Channel MOSFET, 8 A Continuous Drain Current, 12 V Drain Source Voltage, 6-Pin TSOP SI3477DV-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 A.

This MOSFET has a maximum drain-source voltage rating of 12 V.

The typical gate charge at Vgs = 5 V is 58 nC.

The maximum power dissipation for this MOSFET is rated at 4.2 W.

It supports an operating temperature range from -55°C to 150°C.

The dimensions of the TSOP package are 3.1 mm in length, 1.7 mm in width, and 1 mm in height.

The maximum gate-source voltage ratings are -10 V to +10 V.

The forward voltage rating is -0.8 V.

This model is designed for surface mounting.

The maximum drain-source resistance is 33 mΩ.

This MOSFET is suitable for industrial, power management, and electronic device applications.

This model features a P-Channel type.

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