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Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 50 V Peak Reverse Voltage DO-214AA Package ES3A-E3/57T

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Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 50 V Peak Reverse Voltage DO-214AA Package ES3A-E3/57T

Name: Vishay Silicon Junction Switching Diode, Single, 3 A Forward Current, 50 V Peak Reverse Voltage DO-214AA Package ES3A-E3/57T
Brand: Vishay
SKU: 244777
Price: 0.37 USD
Availability: InStock

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Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	2.42mm
Length	7.11mm
Model	ES3A-E3/57T
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Case	DO-201AD Moulding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Package Type	DO-214AA
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Polarity	Colour band denotes cathode end
Terminals	Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	100A
Maximum Forward Voltage Vf	900mV
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	3A
Maximum Peak Reverse Repetitive Voltage Vrrm	50V

Key Features

Single diode configuration designed for ultrafast recovery.
Maximum forward current rating of 3 A.
Low forward voltage drop of 900 mV.
Ultrafast reverse recovery time of 50 ns.
Surface mount DO-214AA package.
Operating temperature range from -55°C to 150°C.
Peak non-repetitive forward surge current of 100 A.
Matte tin-plated leads for solderability.

Product Description

Vishay ES3A-E3/57T is a silicon junction single diode designed for high efficiency with a maximum forward current of 3 A and a peak reverse voltage of 50 V. Packaged in a compact DO-214AA surface mount case, it is ideal for use in switching mode converters, inverters, and other high-frequency rectification and freewheeling applications in consumer electronics, telecommunications, and computing.

This diode features an ultrafast recovery time of 50 ns, which reduces switching losses and improves overall circuit efficiency. The glass passivated chip junction provides enhanced stability and longevity under high-stress conditions. Its solder dip tolerance of up to 275 °C for 10 seconds meets industrial assembly requirements.

Mechanical dimensions are 7.11 mm in length, 6.22 mm in width, and 2.42 mm in height. The device withstands a wide operating temperature range from -55°C to 150°C, supporting reliable operation in diverse environments. Matte tin-plated leads ensure good solderability confirmed by compliance with J-STD-002 and JESD 22-B102 standards. The diode polarity is clearly marked by a cathode end color band, facilitating correct installation.

This diode is RoHS-compliant and meets JESD 201 class 1A whisker test for E3 suffix products, affirming its commercial grade suitability for modern electronics manufacturing. It does not conform to automotive standards and is manufactured in China.

Single diode configuration designed for ultrafast recovery. Maximum forward current rating of 3 A. Low forward voltage drop of 900 mV. Ultrafast reverse recovery time of 50 ns. Surface mount DO-214AA package. Operating temperature range from -55°C to 150°C.

Peak non-repetitive forward surge current of 100 A. Matte tin-plated leads for solderability. Glass passivated chip junction for reliability. Cathode end indicated by colour band.

This Vishay silicon junction diode is widely applicable in industrial, commercial, telecommunications, computer hardware, and consumer electronic designs requiring efficient rectification and switching capabilities. Explore more Discrete Semiconductor components and power device solutions with EnvMart.