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onsemi P-Channel MOSFET, 1.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 NTR1P02LT3G

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onsemi P-Channel MOSFET, 1.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 NTR1P02LT3G

Name: onsemi P-Channel MOSFET, 1.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 NTR1P02LT3G
Brand: onsemi
SKU: 243354
Price: 0.1 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	NTR1P02LT3G
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	1.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	350mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Typical Gate Charge Qg @ Vgs	3.1nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1V

Key Features

Type P channel operating in enhancement mode.
Maximum continuous drain current of 1.3 A.
Drain-source voltage rating of up to 20 V.
Compact 3-pin SOT-23 surface mount package.
Drain-source resistance of 350 milliohms for efficient performance.
Maximum power dissipation of 400 milliwatts.
Typical gate charge of 3.1 nC at specified gate voltage.
Wide operating temperature range from -55°C to +150°C.

Product Description

onsemi NTR1P02LT3G is a P-Channel power MOSFET designed for low voltage switching applications, featuring a maximum continuous drain current of 1.3 A and a maximum drain-source voltage of 20 V. Packaged in a compact 3-pin SOT-23 surface mount package, this enhancement-mode device offers reliable performance and efficient power dissipation of up to 400 milliwatts.

With a low drain-source resistance of 350 milliohms, the device minimizes power loss and heat generation, making it suitable for applications in automotive electronics, power management circuits, and general electronic component designs where small size and efficient switching are critical.

The typical gate charge of 3.1 nC and a maximum gate-source voltage tolerance of -12 V to +12 V allow for precise switching control. It is rated for operating temperatures from -55°C to +150°C, ensuring durability in both harsh industrial environments and automotive conditions. The device meets the stringent automotive AEC-Q101 standard, underscoring its quality and reliability.

Key physical dimensions are 3.04 mm in length, 1.4 mm width, and 1.01 mm height, facilitating integration into compact PCB layouts. Its surface mount package type ensures compatibility with automated assembly processes.

Type P channel operating in enhancement mode. Maximum continuous drain current of 1.3 A. Drain-source voltage rating of up to 20 V. Compact 3-pin SOT-23 surface mount package. Drain-source resistance of 350 milliohms for efficient performance.

Maximum power dissipation of 400 milliwatts. Typical gate charge of 3.1 nC at specified gate voltage. Wide operating temperature range from -55°C to +150°C. Complies with automotive standard AEC-Q101. Small dimensions for space-efficient PCB design.

This MOSFET is ideal for use in industrial electronic circuits, automotive power control, and other electronic applications demanding efficient, reliable switching in a compact footprint. Explore a wide range of Discrete Semiconductors and MOSFET components in the Electronics & Electricals category at EnvMart.