Infineon OptiMOS™ N-Channel MOSFET 30 V 433 A 8-Pin TDSON BSC005N03LS5IATMA1

The Infineon OptiMOS™ BSC005N03LS5IATMA1 is a high-performance N-Channel MOSFET designed to deliver excellent power density and efficiency in electronic power management systems. It supports a maximum continuous drain current rating of 433 A and withstands a drain-source voltage up to 30 V, making it suitable for demanding switching applications in industrial, power electronics, and semiconductor devices.

This MOSFET is housed in an 8-pin TDSON package, enabling surface mount assembly and compact PCB designs. With a low maximum drain-source resistance of 5.5 mΩ, it ensures reduced conduction losses, enhancing overall system efficiency and thermal performance. The device can dissipate up to 188 W of power, supporting robust operation with high reliability.

It operates reliably across a wide temperature range from a minimum of -55°C up to a maximum of 175°C, suitable for harsh environmental conditions. The typical gate charge at Vgs is 51 nC, allowing for efficient and fast switching operations. The forward voltage drop is low at 0.7 V, further contributing to energy-efficient performance.

Although it is not designed to meet specific automotive standards, this MOSFET is ideal for various industrial and electronic component applications, including power supplies, motor control, and energy management systems. RoHS compliant and halogen-free, it also supports green manufacturing practices.

Key features such as low gate-source maximum voltage of 20 V and compact dimensions of 6.35 mm width, 5.49 mm length, and 1.1 mm height make it versatile for integration in diverse electronic assemblies.

The MOSFET operates at a maximum continuous drain current of 433 A. It supports a maximum drain-source voltage of 30 V. The package type is 8-pin TDSON suitable for surface mounting. Low maximum drain-source resistance of 5.5 mΩ ensures minimal power loss.

The device features a maximum power dissipation of 188 W for robust operation. Operating temperature ranges from -55°C to 175°C providing reliability in extreme conditions. Typical gate charge of 51 nC at Vgs supports efficient switching performance.

Forward voltage drop is low at 0.7 V optimizing conduction efficiency. Designed without automotive standard compliance ensuring general industrial use. Explore more high-quality semiconductor products including MOSFETs and power components on EnvMart for your industrial and electronic system design needs.