DiodesZetex Type P-Channel MOSFET, 7.2 A, 40 V, Enhancement Mode, 8-Pin PowerDI3333 Package DMP4025SFG

DiodesZetex DMP4025SFG is a high-performance Type P-Channel MOSFET suitable for power management and switching applications. It supports a continuous drain current of 7.2 A and withstands a drain-source voltage of up to 40 volts. The device utilizes an Enhancement Channel mode to enable efficient switching in various control circuits.

Housed in a compact 8-pin PowerDI3333 surface mount package, the MOSFET is designed for applications where space and thermal management are critical. Its low maximum drain-source resistance of 45 milliohms minimizes conduction losses during operation, improving efficiency in power conversion and regulation tasks.

The device exhibits a maximum power dissipation of 810 milliwatts and a typical gate charge of 33.7 nanocoulombs, enabling fast switching speeds with minimal gate drive requirements. It can operate reliably over a temperature range of -55°C to 150°C, making it suitable for a broad range of industrial and automotive environments.

This MOSFET complies with the rigorous automotive AEC-Q101 standard, ensuring high reliability and durability in automotive electronics and demanding industrial applications.

Its physical dimensions are Compact at 3.35 mm by 3.35 mm with a height of 0.8 mm, optimizing layout density on printed circuit boards. The maximum gate-source voltage rating of -20 to +20 volts provides robust protection against voltage spikes, extending device longevity.

Applications for the DiodesZetex DMP4025SFG include automotive electronics, power management systems, industrial controls, and embedded electronic devices where reliable switching performance is required.

The device features a surface mount PowerDI3333 package with 8 pins. Maximum drain-source resistance of 45 milliohms ensures efficient switching. Typical gate charge is 33.7 nanocoulombs at Vgs. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.

Maximum power dissipation of 810 milliwatts allows stable performance in compact systems. Channels operate in enhancement mode with a forward voltage of approximately 1 V. Compliant with automotive AEC-Q101 standards, ideal for automotive electronics.

Compact dimensions of 3.35 mm length, 3.35 mm width, and 0.8 mm height. Maximum gate-source voltage rating of -20 to +20 volts provides robust gate protection. Explore more DiodesZetex MOSFET devices and related semiconductor components within the EnvMart catalog for your industrial and electronic design needs.