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DiodesZetex Type P-Channel MOSFET 7.2A 40V Enhancement Mode, 8-Pin PowerDI3333 Package DMP4025SFG-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.8mm |
| Length | 3.35mm |
| Model | DMP4025SFG-7 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMP4025SFG |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 810mW |
| Typical Gate Charge Qg @ Vgs | 33.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Operates as a Type P-Channel enhancement mode MOSFET in PowerDI3333 surface mount package.
- Maximum continuous drain current of 7.2 amperes with 40 volts maximum drain-source voltage.
- Low maximum drain-source resistance of 45 milliohms for efficient conduction.
- Maximum power dissipation of 810 milliwatts and operating temperature range from -55°C to 150°C.
- Typical gate charge of 33.7 nanocoulombs at specified gate-source voltage.
- Supports maximum gate-source voltage between -20 volts and +20 volts with a forward voltage of 1 volt.
- Compact physical size of 3.35 mm length by 3.35 mm width and 0.8 mm height for tight PCB layouts.
- Meets automotive standard AEC-Q101 ensuring high reliability in automotive electronics.
Product Description
DiodesZetex DMP4025SFG-7 is a high-performance Type P-Channel MOSFET transistor packaged in a compact 8-pin PowerDI3333 surface mount format. It supports a maximum continuous drain current of 7.2 amperes and is rated for a maximum drain-source voltage of 40 volts, ideal for efficient switching and amplification applications.
This MOSFET features enhancement mode operation with a low maximum drain-source resistance of 45 milliohms, enabling reduced power loss and high efficiency. It can dissipate up to 810 milliwatts of power and operates reliably in a wide temperature range from -55°C up to 150°C, making it suitable for demanding industrial and automotive environments.
The device exhibits a typical gate charge of 33.7 nanocoulombs at the gate-source voltage threshold, facilitating fast switching speeds with minimal losses. It accommodates gate-source voltages between -20V and +20V with a forward voltage of 1V, supporting robust control.
Its compact dimensions (3.35 mm length and width, 0.8 mm height) allow for dense PCB mounting while maintaining performance. The model conforms to the AEC-Q101 automotive quality standard, ensuring dependable performance in automotive electronics and other rigorous applications.
This surface mount P-Channel MOSFET is ideal for automotive, industrial, consumer electronics, power management, and general semiconductor applications. Its low Rds(on) and efficient power dissipation make it suitable for load switching and voltage regulation.
Highly reliable operation at extended temperature and specified voltage/current ranges enables broad effectiveness in harsh environments. Manufactured in China, this new-condition transistor meets the needs of engineers requiring high-quality discrete semiconductors for circuit design and power electronics.
Browse the Electronics & Electricals category at EnvMart for reliable MOSFETs and semiconductors including DiodesZetex models engineered for precision and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 amperes.
It is rated for a maximum drain-source voltage of 40 volts.
This model can dissipate up to 810 milliwatts of power.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 33.7 nanocoulombs at the specified gate-source voltage.
The dimensions are 3.35 mm in length and width, and 0.8 mm in height.
It supports a maximum gate-source voltage between -20 volts and +20 volts.
The maximum drain-source resistance is 45 milliohms.
It meets the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
This model is packaged in an 8-pin PowerDI3333 surface mount format.
It is a Type P-Channel enhancement mode MOSFET.
This model is manufactured in China.
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