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Vishay D Series N-Channel Power MOSFET, 5.3 A, 500 V Enhancement Mode, 3-Pin TO-220FP SIHF5N50D-E3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | SIHF5N50D-E3 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | D Series |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching performance.
- It features a low maximum drain-source resistance of 1.5 ohms for improved conduction.
- The device supports a maximum power dissipation of 30 watts, suitable for medium power applications.
- Designed for through-hole mounting with 3 pins in the TO-220FP package format.
- It maintains performance across a wide temperature range from -55°C to 150°C maximum operating temperature.
- A typical gate charge of 20 nC ensures fast switching response.
- Offers a maximum gate-source voltage range of -30V to +30V for robust gate control.
- Forward voltage drop is low at 1.2 V, enhancing efficiency in power circuits.
Product Description
Vishay SIHF5N50D-E3 D Series N-Channel Power MOSFET is a discrete semiconductor component engineered for precision power management and switching. Featuring a maximum continuous drain current of 5.3 A and a maximum drain-source voltage of 500 V, this device excels in robust industrial and commercial electronics applications.
Housed in a compact 3-pin TO-220FP package, it facilitates easy through-hole mounting and PCB integration. The enhancement mode channel provides reliable operation with a low maximum resistance of 1.5 ohms ensuring minimal power loss. It is capable of dissipating up to 30 W, suitable for effective power handling in circuits.
Operating temperature spans from -55°C to 150°C, making it suitable for demanding environments encountered in industrial control systems, power supplies, and automotive electronics not requiring automotive standard certification. The typical gate charge of 20 nC allows for quick gate switching, supporting efficient high-frequency operation.
The maximum gate-source voltage rating from -30 to +30 V provides stable control and protection against voltage spikes. Its low forward voltage drop of 1.2 V helps reduce heat generation, improving system reliability.
Enhancement mode N-Channel operation ensures fast and efficient switching. High voltage rating of 500 V supports demanding power electronic applications. Compact TO-220FP 3-pin package supports easy PCB mounting and integration.
Wide operating temperature range from -55°C to 150°C for diverse operational conditions. Maximum power dissipation up to 30 W for medium power circuit applications. Typical gate charge of 20 nC for quick switching performance.
Robust gate-source voltage limits enhance device reliability. Low forward voltage drop minimizes conduction losses and heat.
This product is ideal for use in industrial, laboratory, manufacturing, HVAC, power supply, and commercial electronic systems. It is a reliable choice for engineers requiring a durable and efficient power MOSFET within the 5 A and 500 V class range.
Explore more Vishay semiconductor components and related Power MOSFETs for optimized electronics design and production at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.3 A.
This MOSFET has a maximum drain-source voltage rating of 500 V.
It supports a maximum power dissipation of 30 W, making it suitable for medium power applications.
The device is housed in a TO-220FP package type, which allows for through-hole mounting.
The typical gate charge is 20 nC, which facilitates fast switching performance.
It has a maximum gate-source voltage range of -30 V to +30 V.
The dimensions are 10.63 mm in length, 4.83 mm in width, and 9.8 mm in height.
The operating temperature range spans from -55°C to 150°C.
The forward voltage drop is low at 1.2 V, which enhances efficiency in power circuits.
This model features an enhancement mode N-channel design.
It has a total of 3 pins in its configuration.
The country of origin for this MOSFET is India.
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