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Vishay N-Channel Power MOSFET, 20 A Continuous Drain Current, 500 V Drain Source Voltage, Enhancement Mode IRFP460BPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | IRFP460BPBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| - Low Figure-of-Merit (FOM) | Ron x Qg |
| N-channel MOSFET,IRFP460A 20A 500VBrand | Vishay |
| N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460PBFBrand | Vishay |
Key Features
- Enhancement mode MOSFET for efficient operation.
- Low specific on-resistance minimizing power loss.
- High power dissipation of 278 W for robust performance.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 85 nC for fast switching.
- Rugged body diode with avalanche energy rating.
- Simple gate drive circuitry required.
- Suitable for consumer electronics, industrial, and power supply applications.
Product Description
Vishay IRFP460BPBF is a D Series N-Channel Power MOSFET designed for high efficiency and reliability in power management applications. It supports a maximum continuous drain current of 20 A and a drain-source voltage rating of 500 V, housed in a 3-pin TO-247 through-hole package.
This enhancement mode MOSFET features low specific on-resistance and low input capacitance, which reduce power losses and switching times. With a typical gate charge of 85 nC at 10 V gate-source voltage, it ensures fast switching performance suitable for modern power electronics.
The device can dissipate up to 278 W and operate across a wide temperature range from -55°C to 150°C, making it suitable for rugged industrial environments. Its high body diode ruggedness and avalanche energy rating provide added protection in demanding applications.
Ideal for use in consumer electronics such as LCD or plasma TVs, server and telecom power supplies including switched-mode power supplies (SMPS), industrial welding equipment, induction heating, motor drives, and battery chargers. It is a versatile component for power factor correction and other power management systems.
The compact physical dimensions (20.82 mm height, 15.87 mm length, and 5.31 mm width) allow for efficient PCB layout. The simple gate drive circuitry lowers system complexity and cost.
Enhancement mode operation with low figure-of-merit (Ron x Qg) for optimal efficiency. Low area-specific on-resistance and reduced capacitive switching losses. Robust body diode and avalanche energy rating for enhanced reliability.
Wide temperature range and high power dissipation capability. Compact TO-247 package, through-hole mount type with 3 pins. Perfect for power electronics in industrial, telecom, and consumer applications. Explore Vishay and other high-quality Power MOSFET components at EnvMart, your reliable source for advanced electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
It has a drain-source voltage rating of 500 V.
The typical gate charge at a gate-source voltage of 10 V is 85 nC.
This model can dissipate up to 278 W.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 5.31 mm in width.
It operates within a temperature range of -55°C to 150°C.
This model is housed in a TO-247 package type.
The maximum gate-source voltage is -20 V to +20 V.
This model has a pin count of 3.
It is suitable for consumer electronics, industrial applications, and power supply systems.
The channel type is N-channel, and it operates in enhancement mode.
The maximum drain-source resistance is 250 mΩ.
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