Vishay D Series N-Channel Power MOSFET 6 A, 400 V Enhancement Mode, 3-Pin TO-220AB SIHP6N40D-GE3

Vishay SIHP6N40D-GE3 is a high voltage N-Channel power MOSFET transistor from the D Series, designed to handle continuous drain currents up to 6 A and drain-source voltages as high as 400 V. This enhancement mode device is well suited for various industrial and electronic power switching applications.

The device features a compact TO-220AB package with a three-pin through-hole mounting configuration, enabling ease of integration and reliable heat dissipation. Capable of operating at temperatures up to 150°C, it maintains robust performance under demanding conditions.

With a maximum power dissipation rating of 104 W and a low maximum drain-source resistance of 1 ohm, this MOSFET is optimized for efficient power management and thermal stability. It has a typical gate charge of 18 nC, enabling fast switch response and low switching losses.

Continuous drain current rating of 6 A at 400 V maximum drain-source voltage. Enhancement mode N-Channel conduction with low Rds(on) of 1 Ω for high efficiency. Package type: TO-220AB, through-hole mounting, 3 pins. Operating temperature range from -55°C to 150°C.

Typical gate charge of 18 nC ensures fast switching performance. Forward voltage drop of 1.2 V for minimal conduction losses. Compact and robust dimensions facilitating integration in power electronics.

This power MOSFET is primarily used in power electronics circuits, industrial automation, power supplies, motor controllers, and other applications requiring reliable switching of high voltage and current loads. Its durability and specifications meet rigorous industrial and commercial demands.

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