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Vishay TrenchFET Type P-Channel MOSFET 12 A 12 V Enhancement Mode Surface Mount 6-Pin SC-70 SIA447DJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 1.7mm |
| Model | SIA447DJ-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 71mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device features a low 71 milliohm maximum drain-source resistance for efficient power conduction.
- Maximum power dissipation is rated at 19 watts for reliable operation.
- Operates safely in a temperature range from -55°C to 150°C.
- Typical gate charge at 5 V gate-source voltage is 52 nanocoulombs ensuring fast switching.
- Comes with a compact 1.7 mm by 1.7 mm by 0.8 mm package footprint suitable for space-constrained designs.
- Maximum gate-source voltage tolerance is -8 to +8 volts.
- Forward voltage drop under conduction is typically -1.2 volts.
- This device is designed for surface mount assembly with 6 pins.
Product Description
Vishay SIA447DJ-T1-GE3 is a TrenchFET generation III P-Channel MOSFET transistor designed for power switching and load control applications. It supports a continuous drain current of 12 amperes and a maximum drain-source voltage of 12 volts, making it suitable for low-voltage high-current circuits.
The MOSFET is housed in a small 6-pin SC-70 surface mount package with dimensions 1.7 mm length, 1.7 mm width, and 0.8 mm height, facilitating compact PCB layouts. This device operates reliably between temperatures of -55°C to 150°C with a maximum power dissipation of 19 watts, ensuring durability in demanding industrial environments.
Its low maximum drain-source resistance of 71 milliohm aids in reducing conduction losses, thus improving overall system efficiency. The typical gate charge of 52 nanocoulombs at 5 V gate-source voltage offers quick switching performance critical in power electronics.
The maximum gate-source voltage rating of -8 V to +8 V provides protection against voltage spikes, while the typical forward voltage drop of -1.2 V supports efficient device operation.
This MOSFET is ideal for industrial, automotive, consumer electronics, and power management applications where efficient switching and thermal reliability are required. The low Rds(on) minimizes power losses during operations.
The device's small SC-70 package suits compact electronic circuits. Its extended operating temperature range ensures functionality in harsh conditions. Suitable for surface mount manufacturing processes for high production efficiency.
Enhanced gate threshold characteristics provide stable switching behavior. Explore more products in the MOSFET category for diverse semiconductor needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes.
This MOSFET has a maximum drain-source voltage rating of 12 volts.
It comes in a SC-70 package type with dimensions of 1.7 mm length, 1.7 mm width, and 0.8 mm height.
The maximum power dissipation for this MOSFET is rated at 19 watts.
The typical gate charge at a 5 V gate-source voltage is 52 nanocoulombs.
It operates safely in a temperature range from -55°C to 150°C.
The maximum gate-source voltage tolerance is -8 to +8 volts.
The maximum drain-source resistance is 71 milliohms.
This device is suitable for industrial, automotive, consumer electronics, and power management applications.
This model features a 6-pin configuration.
The typical forward voltage drop under conduction is -1.2 volts.
This MOSFET has a P-channel type.
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