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Toshiba Type P-Channel MOSFET, 60 A, 40 V Enhancement Mode, 3-Pin TO-252 TJ60S04M3L
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TJ60S04M3L |
| Width | 7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 9.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Maximum Gate Source Voltage Vgs | -20, +10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low drain-source on-resistance of 7.0 mΩ (typical) at VGS = -10 V.
- Low leakage current with IDSS maximum of -10 μA at VDS = -40 V.
- Enhancement mode device with threshold voltage between -2.0 to -3.0 V.
- High power dissipation capability of up to 90 W.
- Operating temperature range from -55°C to 175°C suitable for automotive applications.
- Compact dimensions with length 6.5 mm, width 7 mm, and height 2.3 mm.
- Complies with automotive standard AEC-Q101 for enhanced reliability.
- Surface mount TO-252 package type with 3 pins for easy PCB assembly.
Product Description
The Toshiba TJ60S04M3L is a P-Channel MOSFET designed for high-performance automotive and industrial electronic circuits. This device supports a maximum continuous drain current of 60 A and a maximum drain-source voltage of 40 V, making it suitable for power switching and motor driver applications.
It features a low drain-source on-resistance of 7.0 mΩ (typical) at a gate-source voltage of -10 V, which ensures high efficiency and reduced power losses during operation. The low leakage current (IDSS max -10 μA at VDS = -40 V) enhances device reliability in low power states.
The MOSFET operates in enhancement mode with a threshold voltage ranging from -2.0 to -3.0 V, ensuring stable switching characteristics. With a maximum power dissipation of 90 W, the TJ60S04M3L can handle significant power loads in harsh environments.
This transistor comes in a compact TO-252 surface-mount package with three pins, facilitating easy integration on printed circuit boards. Its dimensions of 6.5 mm length, 7 mm width, and 2.3 mm height make it suitable for space-constrained applications.
Designed to meet the AEC-Q101 automotive standard, this device is reliable for automotive use cases including motor drivers, DC-DC converters, and switching voltage regulators. It supports a broad operating temperature range from -55°C to 175°C, ensuring performance in diverse environments.
Low drain-source on-resistance of 7.0 mΩ (typical) at VGS = -10 V. Low leakage current with IDSS maximum of -10 μA at VDS = -40 V. Enhancement mode device with threshold voltage between -2.0 to -3.0 V. High power dissipation capability of up to 90 W.
Operating temperature range from -55°C to 175°C suitable for automotive applications. Compact dimensions with length 6.5 mm, width 7 mm, and height 2.3 mm. Complies with automotive standard AEC-Q101 for enhanced reliability.
Surface mount TO-252 package type with 3 pins for easy PCB assembly.
This product is ideal for industrial, automotive, and power management systems requiring efficient high current switching with durable and compact MOSFET technology. Browse EnvMart’s extensive selection of semiconductor devices and electronic components to find complementary parts for your next project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A.
It can handle a maximum drain-source voltage of 40 V.
The typical drain-source on-resistance is 7.0 mΩ at VGS = -10 V.
The operating temperature range is from -55°C to 175°C.
This model uses a TO-252 surface mount package type with 3 pins.
It complies with the AEC-Q101 automotive standard for enhanced reliability.
The maximum power dissipation capability is up to 90 W.
The threshold voltage for enhancement mode operation ranges from -2.0 to -3.0 V.
The maximum gate-source voltage is -20 V to +10 V.
The dimensions are 6.5 mm in length, 7 mm in width, and 2.3 mm in height.
The maximum leakage current (IDSS) is -10 μA at VDS = -40 V.
The typical gate charge (Qg) at Vgs is 125 nC.
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