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Toshiba Type P-Channel MOSFET, 2 A Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin SOT-23 Package SSM3J356R,LF(T

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 800μm
Length 2.4mm
Model SSM3J356R,LF(T
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 400mΩ
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 8.3nC
Maximum Gate Source Voltage Vgs -20V
Forward Voltage Vf 900mV

Key Features

  • Designed for efficient power management switching applications.
  • Surface mount package type suitable for compact PCB layouts.
  • Maximum power dissipation of 2 W allows moderate power handling.
  • Wide operating temperature range from -55°C to 150°C ensures reliability in varied environments.
  • Low maximum drain source resistance of 400 mΩ reduces conduction losses.
  • Typical gate charge of 8.3 nC at gate-source voltage aids in fast switching.
  • Forward voltage of 900 mV and maximum gate source voltage of -20 V provide robust electrical characteristics.

Product Description

Toshiba SSM3J356R,LF(T is a type P-Channel MOSFET device designed with silicon material for reliable power management switching applications. It features a maximum continuous drain current of 2 A and a maximum drain source voltage rating of 60 V. The device comes in a surface mount 3-pin SOT-23 package, making it suitable for space-constrained electronic circuitry.

This MOSFET offers a typical gate charge of 8.3 nC at the gate-source voltage, which enables efficient switching performance. Its low maximum drain source resistance of 400 mΩ contributes to reduced conduction losses and enhanced energy efficiency. With a maximum power dissipation rating of 2 W, the device supports moderate power handling within electronic circuits.

Designed to operate reliably within a temperature range of -55°C to 150°C, it ensures stability even under harsh environmental conditions. The forward voltage drop of 900 mV further facilitates effective switching behavior. The physical footprint is compact, with dimensions of 2.4 mm length, 2.9 mm width, and 800 μm height, ideal for modern electronic designs.

This MOSFET is free from any specific standards or automotive qualification, making it suitable primarily for general electronic and power management use cases. Applications include industrial power switching, consumer electronics power regulation, and embedded system power control.

Designed for efficient power management switching applications. Surface mount package type suitable for compact PCB layouts. Maximum power dissipation of 2 W for moderate power handling. Wide operating temperature range from -55°C to 150°C ensuring robust performance.

Low drain source resistance reduces conduction losses. Typical gate charge enables fast switching speeds. Compact physical size allows space-saving circuit design. Suitable for industrial, laboratory, and commercial electronic applications.

Explore the range of discrete semiconductors and MOSFET devices on EnvMart for versatile solutions in power management and electronic circuit design.

Toshiba Type P-Channel MOSFET, 2 A Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin SOT-23 Package SSM3J356R,LF(T
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Frequently Asked Questions

The maximum continuous drain current of this model is 2 A.

This device has a maximum drain source voltage rating of 60 V.

It comes in a surface mount SOT-23 package with a pin count of 3.

The typical gate charge is 8.3 nC at the gate-source voltage.

The maximum power dissipation rating is 2 W.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum drain source resistance is 400 mΩ.

The forward voltage drop is 900 mV.

The dimensions are 2.4 mm in length, 2.9 mm in width, and 800 μm in height.

It is suitable for industrial power switching, consumer electronics power regulation, and embedded system power control.

The maximum gate source voltage is -20 V.

The country of origin for this model is India.

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