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| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 800μm |
| Length | 2.4mm |
| Model | SSM3J356R,LF(T |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 8.3nC |
| Maximum Gate Source Voltage Vgs | -20V |
| Forward Voltage Vf | 900mV |
Toshiba SSM3J356R,LF(T is a type P-Channel MOSFET device designed with silicon material for reliable power management switching applications. It features a maximum continuous drain current of 2 A and a maximum drain source voltage rating of 60 V. The device comes in a surface mount 3-pin SOT-23 package, making it suitable for space-constrained electronic circuitry.
This MOSFET offers a typical gate charge of 8.3 nC at the gate-source voltage, which enables efficient switching performance. Its low maximum drain source resistance of 400 mΩ contributes to reduced conduction losses and enhanced energy efficiency. With a maximum power dissipation rating of 2 W, the device supports moderate power handling within electronic circuits.
Designed to operate reliably within a temperature range of -55°C to 150°C, it ensures stability even under harsh environmental conditions. The forward voltage drop of 900 mV further facilitates effective switching behavior. The physical footprint is compact, with dimensions of 2.4 mm length, 2.9 mm width, and 800 μm height, ideal for modern electronic designs.
This MOSFET is free from any specific standards or automotive qualification, making it suitable primarily for general electronic and power management use cases. Applications include industrial power switching, consumer electronics power regulation, and embedded system power control.
Designed for efficient power management switching applications. Surface mount package type suitable for compact PCB layouts. Maximum power dissipation of 2 W for moderate power handling. Wide operating temperature range from -55°C to 150°C ensuring robust performance.
Low drain source resistance reduces conduction losses. Typical gate charge enables fast switching speeds. Compact physical size allows space-saving circuit design. Suitable for industrial, laboratory, and commercial electronic applications.
Explore the range of discrete semiconductors and MOSFET devices on EnvMart for versatile solutions in power management and electronic circuit design.
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