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Toshiba N-Channel Enhancement MOSFET, 3.5 A, 100 V, 3-Pin SOT-23 Package SSM3K361R,LF(B
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | Toshiba |
| Height | 0.7mm |
| Length | 2.9mm |
| Model | SSM3K361R,LF(B |
| Width | 1.8mm |
| Mount Type | Surface Mount |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 92mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Forward Voltage Vf | 1.5V |
| Transistor Configuration | Single |
Key Features
- Features low drain-source on-resistance with typical values of 65 mΩ at 4.5 V and 51 mΩ at 10 V gate drive.
- Maximum continuous drain current is 3.5 A for robust power handling.
- Maximum drain-source voltage is 100 V suitable for a variety of power switching applications.
- Compact 3-pin SOT-23 package enables surface mounting on PCBs with limited space.
- Maximum power dissipation rated at 2.4 W ensures reliable thermal performance.
- Operates up to a high temperature of 175°C, meeting automotive standards AEC-Q101.
- Single transistor configuration optimized for power management and DC-DC converter applications.
- Device dimensions are 2.9 mm length, 1.8 mm width, and 0.7 mm height for compact integration.
Product Description
Toshiba SSM3K361R,LF(B is a high-performance single N-Channel enhancement mode MOSFET designed for power management applications, including DC-DC converters and power switching modules. With a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 100 V, this transistor offers reliable and efficient operation in compact electronic circuits.
The device features a low drain-source on-resistance (RDS(ON)) of 65 mΩ typical at a gate-source voltage of 4.5 V, and 51 mΩ typical at 10 V gate drive, which minimizes power losses and heat generation during switching. It is housed in a compact 3-pin SOT-23 surface mount package measuring 2.9 mm by 1.8 mm by 0.7 mm, making it suitable for space-constrained PCB designs.
Operating up to 175°C maximum temperature and complying with automotive standard AEC-Q101, this MOSFET is robust enough for rigorous industrial and automotive environments. The transistor has a maximum power dissipation capability of 2.4 W, ensuring dependable thermal management.
Typical applications include power management switches, DC-DC converters, and power regulation circuits within various industrial, automotive, and consumer electronics systems. The device is manufactured in Thailand under strict quality control to ensure consistency and reliability.
Low drain-source on-resistance for efficient switching. High maximum continuous drain current of 3.5 A. 100 V maximum drain-source voltage rating. Compact 3-pin SOT-23 surface mount package. High maximum operating temperature of 175°C.
Compliance with AEC-Q101 automotive standards. Single transistor configuration suitable for power management. Forward voltage of 1.5 V for efficient operation. Manufactured in Thailand. Explore a wide range of Toshiba semiconductor components and MOSFETs for your industrial, automotive, and electronics manufacturing needs through EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 3.5 A, allowing for robust power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 100 V, suitable for a variety of power switching applications.
The typical drain-source on-resistance is 65 mΩ at a gate-source voltage of 4.5 V and 51 mΩ at 10 V, minimizing power losses during operation.
It is housed in a compact 3-pin SOT-23 surface mount package with dimensions of 2.9 mm length, 1.8 mm width, and 0.7 mm height.
The maximum power dissipation rated for this MOSFET is 2.4 W, ensuring reliable thermal performance during operation.
It operates up to a maximum temperature of 175°C, which meets automotive standards AEC-Q101.
This model features a single transistor configuration, optimized for power management and DC-DC converter applications.
This MOSFET complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.
The forward voltage for this model is 1.5 V, which contributes to its efficient operation in circuits.
Yes, it is designed for surface mounting on PCBs, making it ideal for applications with limited space.
This MOSFET contains a single element per chip, which is typical for discrete semiconductors.
This component is manufactured in Thailand, ensuring quality control during production.
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