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Toshiba N-Channel MOSFET 340 A 40 V Enhancement Mode 8-Pin SOP TPHR8504PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 950μm |
| Length | 5mm |
| Model | TPHR8504PL |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 340A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 103nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 340 A for high current handling.
- Maximum drain-source voltage of 40 V suitable for medium voltage operations.
- Low drain-source on-resistance of 0.7 mΩ at VGS = 10 V minimizes power loss.
- Small gate charge of 23 nC reduces switching losses and improves efficiency.
- Maximum power dissipation rating of 170 W supports demanding thermal conditions.
- Enhanced surface mount SOP package with an 8-pin configuration for compact designs.
- Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
- Low leakage current of 10 μA at VDS = 40 V for reduced standby power consumption.
Product Description
Toshiba TPHR8504PL is a high-efficiency N-Channel MOSFET designed to handle a continuous drain current of 340 A and a drain-source voltage of 40 V. Packaged in an 8-pin SOP surface mount format, this device is optimized for power-efficient switching in applications such as DC-DC converters, switching voltage regulators, and motor drivers.
The MOSFET features a low drain-source on-resistance of 0.7 mΩ (typical at VGS = 10 V) and a small gate charge of 23 nC, contributing to reduced switching losses and improved system efficiency. Its maximum power dissipation of 170 W supports robust operation in demanding industrial environments.
This device operates in enhancement mode with a threshold voltage ranging from 1.4 to 2.4 V, ensuring precise switching control. It maintains a low leakage current of 10 μA at VDS = 40 V, minimizing standby power consumption. Temperature ranges from -55°C minimum to 175°C maximum enable reliable performance under harsh conditions.
The compact 5 mm by 5 mm by 0.95 mm package enables dense PCB layouts and high integration levels. The 8-pin SOP package is suitable for surface mounting, facilitating automated assembly processes.
Maximum continuous drain current of 340 A suits high-power industrial electronics. Maximum drain-source voltage of 40 V suitable for moderate voltage systems. Low on-resistance reduces conduction power losses in switching applications.
Small gate and output charges allow for high-speed switching with efficiency. Wide operating temperature range supports diverse industrial and automotive applications. Surface mount SOP package ensures compactness and ease of PCB assembly.
This MOSFET is ideally utilized in industrial, automotive, power management, and manufacturing environments requiring efficient power switching, high current capacity, and thermal stability.
Explore the electronics & electricals category on EnvMart for a comprehensive range of discrete semiconductors and MOSFET devices for your power and signal control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 340 A, making it suitable for high-power applications.
The maximum drain-source voltage is 40 V, which is appropriate for medium voltage operations.
The typical drain-source on-resistance is 0.7 mΩ at VGS = 10 V, which helps minimize power loss during operation.
The typical gate charge is 23 nC, which contributes to reduced switching losses and improved efficiency.
It has a maximum power dissipation rating of 170 W, suitable for demanding thermal conditions.
The dimensions of this MOSFET are 5 mm in length, 5 mm in width, and 950 μm in height.
The operating temperature range is from -55°C to 175°C, ensuring reliability in harsh environments.
This model comes in an 8-pin SOP surface mount package, facilitating compact designs and automated assembly.
The TPHR8504PL is an N-channel MOSFET, optimized for power-efficient switching applications.
The maximum gate-source voltage is 20 V, which is important for ensuring proper operation in circuits.
This MOSFET is suitable for applications such as DC-DC converters, switching voltage regulators, and motor drivers.
The leakage current is 10 μA at VDS = 40 V, which helps reduce standby power consumption.
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