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Vishay Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain-Source Voltage, 8-Pin SO-8 Package SI4153DY-T1-GE3

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Vishay Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain-Source Voltage, 8-Pin SO-8 Package SI4153DY-T1-GE3

Name: Vishay Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain-Source Voltage, 8-Pin SO-8 Package SI4153DY-T1-GE3
Brand: Vishay
SKU: 231801
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SI4153DY-T1-GE3
Mount Type	Surface
Series	Si4153DY
Maximum Operating Temperature	150°C
Package Type	SO-8
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	-19.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	95mΩ
Maximum Power Dissipation Pd	5.6W
Typical Gate Charge Qg @ Vgs	31nC
Maximum Gate Source Voltage Vgs	25V

Key Features

This MOSFET is housed in an 8-Pin SO-8 surface mount package.
It offers a low maximum drain-source resistance of 95 milliohms ensuring low power loss.
The device operates reliably at temperatures ranging from -55°C to a maximum of 150°C.
Maximum gate-source voltage rating is 25 V for robust gate control.
Typical gate charge is 31 nanocoulombs at gate voltage of 31 V aiding in fast switching.
Power dissipation capability is rated at 5.6 W for thermal management.
The MOSFET complies with RoHS standards ensuring environmental safety.
Ideal for power management, adaptor switching, and load switch applications.

Product Description

Vishay's SI4153DY-T1-GE3 is a Type P-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) designed for efficient power switching and management. This discrete semiconductor device supports a maximum continuous drain current of -19.3 amperes and a maximum drain-source voltage rating of 30 volts, providing reliable operation in medium power circuits.

Equipped with an 8-pin SO-8 surface mount package, this MOSFET enables compact PCB designs while maintaining robust electrical characteristics. Its maximum drain-source resistance (Rds) of 95 milliohms ensures minimal conduction losses, improving overall system efficiency.

The device withstands operating temperature extremes from -55 degrees Celsius to 150 degrees Celsius, making it suitable for demanding industrial, automotive, and commercial applications. It features a maximum gate-source voltage rating of 25 volts and a typical gate charge of 31 nanocoulombs, which facilitates fast and precise switching performance.

With a power dissipation rating of 5.6 watts, the SI4153DY-T1-GE3 effectively manages thermal loads during operation. This MOSFET fully complies with RoHS environmental standards, supporting green manufacturing and sustainability goals.

Typical application areas include power management modules, adaptor switches, and load switching circuits where high efficiency and reliability are essential. Its rugged design assures proper functioning in a range of industrial, laboratory, manufacturing, and electronic assembly environments.

This MOSFET is housed in an 8-Pin SO-8 surface mount package. It offers a low maximum drain-source resistance of 95 milliohms ensuring low power loss. The device operates reliably at temperatures ranging from -55°C to a maximum of 150°C.

Maximum gate-source voltage rating is 25 V for robust gate control. Typical gate charge is 31 nanocoulombs at gate voltage of 31 V aiding in fast switching. Power dissipation capability is rated at 5.6 W for thermal management.

The MOSFET complies with RoHS standards ensuring environmental safety. Ideal for power management, adaptor switching, and load switch applications. Explore EnvMart's wide range of discrete semiconductors and MOSFETs for your electronic design needs with confidence.