onsemi N-Channel MOSFET, 2.5 A Continuous Drain Current, 30 V Drain Source Voltage, Enhancement Mode, 3-Pin NTR4503NT1G

onsemi NTR4503NT1G is a high-performance N-Channel Power MOSFET designed for efficient switching in electronic circuits. This component features an enhancement mode channel type and is housed in a SOT-23 3-pin surface mount package, perfect for compact PCB applications.

With a maximum continuous drain current of 2.5 A and a maximum drain-source voltage of 30 V, this transistor supports medium power management needs in a variety of industrial electronic systems. The device offers a low maximum drain-source resistance of 140 milliohms, contributing to reduced power losses and enhanced efficiency.

The MOSFET withstands a maximum gate-source voltage range from -20 V to +20 V and a power dissipation rating of 730 mW, allowing it to operate reliably within a wide thermal envelope. The operating temperature range spans from -55°C to 150°C, making it suitable for harsh environmental conditions found in automotive and industrial electronics.

Its typical gate charge of 3.6 nC at Vgs ensures rapid switching performance, which is critical for high-frequency applications. Additionally, the device complies with the stringent automotive AEC-Q101 standards, confirming its quality and durability in automotive electronics systems.

The compact physical footprint of 3.04 mm length, 1.4 mm width, and 1.01 mm height ensures easy integration into densely packed circuit boards. Installation is optimized by the surface mount package, which supports automated assembly processes for improved production efficiency.

Enhancement mode N-Channel MOSFET for power switching. SOT-23 3-pin package suitable for surface mounting on PCBs. Maximum continuous drain current of 2.5 A and 30 V drain-source voltage. Low Rds(on) of 140 milliohms for efficient conduction.

Wide operating temperature range from -55°C to 150°C. Compliant with AEC-Q101 for automotive applications. Typical gate charge of 3.6 nC supports fast switching. Power dissipation of 730 mW enables reliable operation under load.

Compact size supports dense PCB layouts and automated assembly.

This MOSFET is ideal for industrial and automotive power management, signal switching, and amplification applications. It offers designers a reliable, high-quality solution for controlling medium power loads with high efficiency and thermal robustness.

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