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Vishay N-Channel Power MOSFET Surface Mount, 59.5 A, 80 V, PowerPAK SO-8, 8-Pin SiR588DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR588DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR588DP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59.5A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.008Ω |
| Maximum Power Dissipation Pd | 59.5W |
| Typical Gate Charge Qg @ Vgs | 14.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Low on-resistance ensures reduced conduction losses and thermal dissipation.
- Supports high continuous drain current ideal for heavy-load switching.
- Compact PowerPAK SO-8 surface mount package enhances thermal management.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
- Maximum gate-source voltage limited to 20 V to protect gate integrity.
- Typical gate charge of 14.2 nC enables efficient high-speed switching.
- Power dissipation capacity of 59.5 W improves thermal margin.
- Suitable for DC-DC converters, motor drives, power supplies, and battery management systems.
Product Description
Vishay SiR588DP-T1-RE3 is a high-performance N-Channel Power MOSFET engineered for demanding surface-mount power electronics applications. Featuring a maximum continuous drain current of 59.5 A and drain-source voltage rating of 80 V, it excels in medium-voltage designs requiring efficient switching and thermal management. Housed in a compact PowerPAK SO-8 8-pin package, it provides improved thermal contact and a small footprint suitable for high-density circuit boards.
Designed to operate reliably from -55°C to 150°C, this device suits industrial, telecommunications, server power supplies, and automotive power management applications where robust temperature tolerance and reliability are critical. It supports fast and efficient switching, backed by a low on-resistance (0.008 Ω typical) that minimizes conduction losses and thermal output.
The SiR588DP-T1-RE3 MOSFET features a maximum gate-source voltage of 20 V, requiring gate drive circuits to comply for gate reliability. Its typical gate charge of 14.2 nC balances switching speed with energy efficiency, making it ideal for motor driver inverter stages, DC-DC converters, and battery charging systems.
Low conduction losses due to very low Rds(on) improve energy efficiency. High current capacity supports demanding load switching. Robust operating temperature range suitable for harsh environments. Compact PowerPAK SO-8 package provides superior thermal dissipation.
Efficient gate charge characteristics enhance switching performance. RoHS compliant for environmental safety. Application versatility in power management, industrial and telecom equipment.
Choose Vishay SiR588DP-T1-RE3 MOSFET for reliable, high-current, and thermally robust power switching solutions in modern electronics design. Discover further offerings in the Electronics & Electricals category at EnvMart for seamless component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 59.5 A.
It has a maximum drain-source voltage rating of 80 V.
The typical gate charge for the SiR588DP-T1-RE3 is 14.2 nC.
This model is housed in a PowerPAK SO-8 package.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage is limited to 20 V.
The dimensions are 6.15 mm in length and 5.15 mm in width.
The maximum power dissipation capacity is 59.5 W.
The typical on-resistance (Rds(on)) is 0.008 Ω.
It is suitable for applications such as DC-DC converters, motor drives, power supplies, and battery management systems.
Yes, the SiR588DP-T1-RE3 is RoHS compliant.
This model uses surface mounting.
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