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Vishay N-Channel MOSFET 100 A, 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR584DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.0039Ω |
| Maximum Power Dissipation Pd | 83.3W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Offers maximum continuous drain current of 100 A.
- Maximum drain-source voltage rating is 80 V suitable for medium voltage circuits.
- Features very low drain-source resistance of 3.9 milliohms for reduced conduction losses.
- Equipped with 8-pin PowerPAK SO-8 surface mount package.
- Supports operation from -55°C up to 150°C ensuring reliability in harsh environments.
- Maximum gate-source voltage is ±20 V allowing robust gate drive compatibility.
- Maximum power dissipation rating is 83.3 W for high power handling capability.
- Typical gate charge is 56 nC facilitating fast switching performance.
Product Description
Vishay SiR584DP-T1-RE3 is a N-Channel power MOSFET designed for high efficiency power switching and control in electronic circuits. It supports a maximum continuous drain current of 100 A and a maximum drain-source voltage of 80 V, making it suitable for medium voltage and high current applications. The device is packaged in a compact 8-pin PowerPAK SO-8 surface mount package, providing excellent thermal and electrical performance.
This MOSFET features a very low drain-source on resistance (Rds) of 0.0039 Ω, which significantly reduces conduction losses and improves overall efficiency. It operates reliably over a wide temperature range from -55°C to 150°C, supporting demanding industrial and automotive conditions.
The typical gate charge of 56 nC facilitates fast switching, making it ideal for use in synchronous rectification, primary side switching, DC/DC converters, and motor drive switching applications. The maximum gate-source voltage of ±20 V allows safe and effective driving of the transistor gate.
Designed to meet RoHS environmental standards, this MOSFET supports sustainable manufacturing processes and environmental compliance requirements. The SiR series by Vishay is known for high reliability and robust construction, ensuring dependable operation in various electronic and power management systems.
Maximum continuous drain current of 100 A for high load handling. Maximum drain-source voltage rating of 80 V suitable for medium voltage power applications. Low on resistance (Rds) of 3.9 mΩ for efficient power management.
Compact PowerPAK SO-8 surface mount package with 8 pins. Operating temperature range from -55°C to 150°C for wide environmental tolerance. Maximum gate-source voltage of 20 V ensuring safe gate drive. Typical gate charge of 56 nC enables fast switching speeds.
Maximum power dissipation rated at 83.3 W to support high power environments. RoHS compliant for environmental safety.
This MOSFET is ideally suited for industrial, commercial, and automotive power electronics including synchronous rectifiers, motor drive switches, and DC/DC converters. Its robust electrical characteristics and thermal stability make it an essential component for efficient power management circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
The maximum drain-source voltage rating is 80 V, making it suitable for medium voltage applications.
It features a very low drain-source on resistance of 3.9 milliohms, which helps reduce conduction losses.
This MOSFET operates reliably over a wide temperature range from -55°C to 150°C.
The typical gate charge is 56 nC, facilitating fast switching performance.
The maximum power dissipation rating is 83.3 W, allowing it to handle high power environments.
It is packaged in an 8-pin PowerPAK SO-8 surface mount package.
The maximum gate-source voltage is ±20 V, ensuring robust gate drive compatibility.
The dimensions are 6.15 mm in length and 5.15 mm in width.
Yes, this MOSFET is designed to meet RoHS environmental standards.
It is suitable for applications such as synchronous rectification, DC/DC converters, and motor drive switching.
This model features an N-channel configuration.
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