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Vishay EF N-Channel Power MOSFET, 20 A Continuous Drain Current, 800 V Drain Source Voltage, TO-220AB SIHP24N80AEF-GE3

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Vishay EF N-Channel Power MOSFET, 20 A Continuous Drain Current, 800 V Drain Source Voltage, TO-220AB SIHP24N80AEF-GE3

Name: Vishay EF N-Channel Power MOSFET, 20 A Continuous Drain Current, 800 V Drain Source Voltage, TO-220AB SIHP24N80AEF-GE3
Brand: Vishay
SKU: 231770
Price: 6.95 USD
Availability: InStock

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SIHP24N80AEF-GE3
Mount Type	Through Hole
Series	EF
Maximum Operating Temperature	150°C
Package Type	TO-220AB
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	0.195Ω
Maximum Power Dissipation Pd	208W
Typical Gate Charge Qg @ Vgs	90nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Designed for continuous drain current of 20 amperes to handle heavy loads.
Maximum drain-source voltage rating of 800 volts for high-voltage switching.
Features a low maximum drain-source resistance Rds(on) of 0.195 ohms to reduce conduction losses.
Power dissipation capacity of 208 watts enables high-power operation with effective thermal management.
Supplied in a TO-220AB package with 3 pins for through-hole mounting and easy heatsink attachment.
Operates reliably over a wide temperature range from -55°C to 150°C for harsh environments.
Typical gate charge of 90 nanocoulombs provides predictable switching performance.
Maximum gate-source voltage tolerance of 30 volts ensures gate protection.

Product Description

Vishay SIHP24N80AEF-GE3 is a high-voltage N-channel power MOSFET specifically engineered for robust and efficient switching in high-current industrial environments. Rated for a continuous drain current of 20A and a maximum drain-source voltage of 800V, this device supports demanding applications requiring reliable high-voltage performance.

Its TO-220AB 3-pin through-hole package facilitates straightforward mounting and heat dissipation, making it well suited for power supply primary switches, motor drive front-end circuits, industrial inverter switching, and laboratory high-voltage testing rigs.

Featuring a low maximum drain-source resistance of 0.195 ohms, the MOSFET reduces conduction losses and enhances efficiency. With a power dissipation limit of 208 watts, it supports high-power operation when paired with appropriate cooling solutions.

The device is rated to operate within a broad temperature range, from -55 degrees Celsius up to 150 degrees Celsius, ensuring consistent performance in various industrial and converter use cases. It exhibits a typical gate charge of 90 nanocoulombs for predictable switching dynamics, while its maximum gate-source voltage of 30 volts safeguards gate integrity.

Its typical forward voltage of 1.2 volts affects conduction threshold and reverse recovery during freewheeling, important considerations in switching power applications. 20A continuous drain current for high load handling.

800V drain-source voltage rating for high voltage switching. Low Rds(on) of 0.195 ohms to minimize power loss. 208W power dissipation to support high power levels. TO-220AB through-hole package for ease of mounting and cooling.

Wide operating temperature (-55°C to 150°C) for harsh conditions. 90nC gate charge for controlled switching behavior. 30V maximum gate-source voltage for gate protection. 1.2V forward voltage impacting conduction and switching.

RoHS compliant ensuring environmental safety standards.

This Power MOSFET is ideal for use in industrial power converters, switching power supplies, motor drives, and laboratory equipment requiring reliable and efficient high-voltage switching components.

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Frequently Asked Questions

The maximum continuous drain current for this model is 20 amperes, allowing it to handle heavy loads effectively.

This power MOSFET has a maximum drain-source voltage rating of 800 volts, suitable for high-voltage switching applications.

The maximum drain-source resistance (Rds(on)) is 0.195 ohms, which helps to minimize power loss during operation.

It has a power dissipation capacity of 208 watts, enabling high-power operation when used with adequate cooling solutions.

This model is supplied in a TO-220AB package, which features 3 pins for through-hole mounting and facilitates easy heatsink attachment.

It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

The typical gate charge is 90 nanocoulombs, which provides predictable switching performance.

The maximum gate-source voltage tolerance for this MOSFET is 30 volts, ensuring protection for the gate.

The typical forward voltage is 1.2 volts, which affects conduction threshold and reverse recovery during freewheeling.

Yes, this model is RoHS compliant, ensuring it meets environmental safety standards.

It is ideal for use in industrial power converters, switching power supplies, motor drives, and laboratory equipment requiring reliable high-voltage switching.

This device features an N-channel configuration, which is commonly used for efficient switching in high-current applications.