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Vishay P-Channel MOSFET PowerPAK SC-70, 9 A, 20 V, Low On-Resistance SIA4265EDJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIA4265EDJ-T1-GE3 |
| Mount Type | Surface |
| Series | SIA |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.032Ω |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 13.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Typical ESD protection | 3000 V (HBM) |
Key Features
- This MOSFET features low on-resistance of 0.032 ohms for efficient switching.
- It supports a maximum power dissipation of 15.6 W for robust performance.
- The device operates over a temperature range from -55°C to 150°C.
- Includes typical gate charge of 13.8 nC at Vgs for fast switching response.
- The maximum gate-source voltage rating is ±8 V, ensuring gate protection.
- Its small footprint PowerPAK SC-70 surface-mount package enables compact PCB designs.
- Provides electrostatic discharge (ESD) protection rated at 3000 V (HBM).
- Ideal for use as load switches, battery switches, or charger switches in industrial electronic applications.
Product Description
Vishay SIA4265EDJ-T1-GE3 is a high-performance P-Channel MOSFET designed for medium power switching applications. Featuring a maximum continuous drain current of 9 A and a maximum drain-source voltage of 20 V, this device comes housed in a compact PowerPAK SC-70 surface-mount package that optimizes PCB space usage for modern industrial electronics.
It boasts a low typical on-resistance of 0.032 ohms, enabling efficient power management with minimized heat dissipation. The MOSFET supports a maximum power dissipation of 15.6 W, suitable for reliable operation under demanding load conditions. Its wide operating temperature range from -55°C to 150°C ensures stable performance in harsh industrial, automotive, and battery management environments.
The device features a typical gate charge of 13.8 nC at Vgs, facilitating fast switching speeds and reduced switching losses. The maximum gate-source voltage is rated at ±8 V to prevent gate oxide breakdown, enhancing device robustness. Additionally, Vishay's MOSFET provides electrostatic discharge protection up to 3000 V (HBM), improving component durability during handling and operation.
This MOSFET is 100% Rg tested and designed for use in load switches, battery switches, charger switches, and other power switching circuits. Its thermally enhanced PowerPAK SC-70 package delivers improved thermal performance to extend device lifespan and system reliability.
The compact size and surface-mount configuration make it ideal for high-density PCB assemblies in industrial electronics, telecommunications, automotive electronics, and battery management systems. Reliable and efficient, it meets RoHS compliance standards.
Low on-resistance for high efficiency. Wide temperature range for harsh environments. Fast switching with low gate charge. Robust gate voltage tolerance. Compact PowerPAK SC-70 package. ESD protection for safe handling. Suitable for load and battery switching applications.
Explore additional MOSFETs and discrete semiconductor components at EnvMart for your industrial, manufacturing, and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
It can handle a maximum drain-source voltage of 20 V.
The typical on-resistance is 0.032 ohms, which contributes to efficient power management.
The maximum power dissipation rating is 15.6 W.
This model operates over a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 13.8 nC, facilitating fast switching speeds.
The maximum gate-source voltage rating is ±8 V, which helps prevent gate oxide breakdown.
It comes in a compact PowerPAK SC-70 surface-mount package, optimizing PCB space.
It provides electrostatic discharge protection rated at 3000 V (HBM).
This MOSFET is suitable for use as load switches, battery switches, and charger switches in industrial electronic applications.
Yes, it meets RoHS compliance standards.
The country of origin for this device is India.
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