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Vishay P-Channel MOSFET 50A 40V Enhancement TO-252 SUD50P04-08-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SUD50P04-08-GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SUD50P04-08 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 73.5W |
| Typical Gate Charge Qg @ Vgs | 106nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -0.8V |
Key Features
- Maximum continuous drain current is 50A for high power operation.
- Drain-source voltage rating is 40V suitable for robust switching circuits.
- Enhancement mode channel offers energy-efficient performance.
- TO-252 surface mount package with 3 pins for compact PCB integration.
- Low drain-source resistance of 10mΩ improves efficiency and reduces losses.
- Maximum power dissipation up to 73.5W for demanding environments.
- Can operate in temperatures from -55°C to 150°C for wide industrial use.
- Gate-source voltage rating up to 20V provides reliable gate control.
Product Description
Vishay SUD50P04-08-GE3 is a high-performance P-Channel MOSFET designed to deliver robust power handling capabilities in demanding industrial, electronic, and automotive applications. With a maximum continuous drain current of 50A and a drain-source voltage rating of 40V, this MOSFET is suitable for high-current switching, load management, and power amplification circuits.
Maximum continuous drain current is 50A for high power operation. Drain-source voltage rating is 40V suitable for robust switching circuits. Enhancement mode channel offers energy-efficient performance. TO-252 surface mount package with 3 pins for compact PCB integration.
Low drain-source resistance of 10mΩ improves efficiency and reduces losses. Maximum power dissipation up to 73.5W for demanding environments. Can operate in temperatures from -55°C to 150°C for wide industrial use. Gate-source voltage rating up to 20V provides reliable gate control.
Its enhancement channel mode ensures reduced power losses and optimized switching efficiency. The TO-252 surface mount package provides secure installation and space-saving integration on modern printed circuit boards, making it ideal for commercial and industrial-grade designs.
With a typical gate charge of 106nC, the SUD50P04-08-GE3 ensures fast gate switching and responsiveness. The device features a low forward voltage of -0.8V, and its low drain-source resistance (10mΩ) contributes to energy-efficient operation. The MOSFET can dissipate up to 73.5W of power, and its wide operating temperature range (-55°C to 150°C) is suitable for extreme environments including manufacturing, automation, HVAC, power supplies, and heavy-duty equipment.
Applications include motor drivers, battery protection, DC-DC converters, industrial controls, and load switches. For more high-performance MOSFETs and semiconductor components, explore Vishay products in EnvMart’s extensive collection of electronic and industrial solutions.
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Frequently Asked Questions
The maximum continuous drain current for the SUD50P04-08-GE3 is 50A, making it suitable for high power operation.
This MOSFET has a drain-source voltage rating of 40V, suitable for robust switching circuits.
The SUD50P04-08-GE3 comes in a TO-252 surface mount package with 3 pins, allowing for compact PCB integration.
This model can dissipate up to 73.5W, making it capable of handling demanding environments.
The device can operate in temperatures ranging from -55°C to 150°C, suitable for wide industrial use.
The maximum gate-source voltage rating is 20V, providing reliable gate control.
The typical gate charge is 106nC, ensuring fast gate switching and responsiveness.
The forward voltage for this model is -0.8V, contributing to its energy-efficient operation.
The low drain-source resistance is 10mΩ, which improves efficiency and reduces losses.
This MOSFET is suitable for applications including motor drivers, battery protection, DC-DC converters, and industrial controls.
The SUD50P04-08-GE3 features an enhancement mode channel, which offers energy-efficient performance.
The dimensions of this model are 6.73mm in length, 6.22mm in width, and 2.38mm in height.
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