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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 11.17mm |
| Length | 10.36mm |
| Model | IPP075N15N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP075N15N3 G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPP075N15N3GXKSA1 is a power MOSFET designed for high efficiency and high current handling in industrial, automotive, and power management applications. This N-Channel enhancement mode device supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 150 V, making it suitable for demanding power switching tasks.
The MOSFET is housed in a 4-pin TO-220 package providing through-hole mounting capability, ideal for robust and reliable circuit integration. It delivers a maximum power dissipation of 300 W with low R DS(on) of 7.7 milliohms, ensuring minimal conduction losses and higher system efficiency.
With operation temperature limits from -55°C to 175°C, the device performs reliably in harsh thermal conditions often found in automotive or industrial environments. The maximum gate-source voltage of 20 V provides robust gate drive tolerance, while the typical gate charge of 70 nC ensures low switching losses for improved performance in switching regulators and power inverters.
Key application areas include synchronous rectification in AC-DC switched mode power supplies, motor control systems for vehicles and industrial equipment, isolated DC-DC converters in telecom/datacom, and class D audio amplifiers. Its high power density and efficiency allow designers to minimize board space and thermal management challenges.
The device excels with world-class low R DS(on) and excellent switching performance. High power dissipation rating supports demanding loads and high current peaks. Through-hole TO-220 package enables simple mounting and heat sinking.
Wide operating temperature range suits industrial and automotive use cases. The robust gate voltage max and low gate charge aid efficient power stage designs. Applications include UPS, power tools, telecom power supplies, and automotive electronics.
This MOSFET by Infineon combines reliability with top-tier efficiency, ideal for engineers seeking advanced power semiconductor solutions. Explore related MOSFETs and power management components within EnvMart's comprehensive semiconductor category.
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