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Infineon IPP075N15N3GXKSA1 150 V 100 A N-Channel Enhancement MOSFET, 300 W Power Dissipation, 4-Pin TO-220 Package

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 11.17mm
Length 10.36mm
Model IPP075N15N3GXKSA1
Width 4.57mm
Mount Type Through Hole
Series IPP075N15N3 G
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 7.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 70nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Very low on-resistance of 7.7 milliohms ensures excellent switching performance.
  • Maximum continuous drain current of 100 amperes supports high power applications.
  • Rated for 150 volts drain-source voltage for robust operation.
  • High power dissipation capability of 300 watts allows demanding workloads.
  • TO-220 package offers through-hole mounting and effective heat dissipation.
  • Wide operating temperature range from -55°C to 175°C for harsh environments.
  • Typical gate charge of 70 nanoCoulombs minimizes switching losses.
  • Gate-source voltage tolerance of ±20 volts protects the MOSFET gate.

Product Description

Infineon IPP075N15N3GXKSA1 is a power MOSFET designed for high efficiency and high current handling in industrial, automotive, and power management applications. This N-Channel enhancement mode device supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 150 V, making it suitable for demanding power switching tasks.

The MOSFET is housed in a 4-pin TO-220 package providing through-hole mounting capability, ideal for robust and reliable circuit integration. It delivers a maximum power dissipation of 300 W with low R DS(on) of 7.7 milliohms, ensuring minimal conduction losses and higher system efficiency.

With operation temperature limits from -55°C to 175°C, the device performs reliably in harsh thermal conditions often found in automotive or industrial environments. The maximum gate-source voltage of 20 V provides robust gate drive tolerance, while the typical gate charge of 70 nC ensures low switching losses for improved performance in switching regulators and power inverters.

Key application areas include synchronous rectification in AC-DC switched mode power supplies, motor control systems for vehicles and industrial equipment, isolated DC-DC converters in telecom/datacom, and class D audio amplifiers. Its high power density and efficiency allow designers to minimize board space and thermal management challenges.

The device excels with world-class low R DS(on) and excellent switching performance. High power dissipation rating supports demanding loads and high current peaks. Through-hole TO-220 package enables simple mounting and heat sinking.

Wide operating temperature range suits industrial and automotive use cases. The robust gate voltage max and low gate charge aid efficient power stage designs. Applications include UPS, power tools, telecom power supplies, and automotive electronics.

This MOSFET by Infineon combines reliability with top-tier efficiency, ideal for engineers seeking advanced power semiconductor solutions. Explore related MOSFETs and power management components within EnvMart's comprehensive semiconductor category.

Infineon IPP075N15N3GXKSA1 150 V 100 A N-Channel Enhancement MOSFET, 300 W Power Dissipation, 4-Pin TO-220 Package
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPP075N15N3GXKSA1 is 100 amperes.

This model has a maximum drain-source voltage rating of 150 volts.

It can handle a maximum power dissipation of 300 watts, making it suitable for demanding applications.

The on-resistance (R DS(on)) is 7.7 milliohms, which ensures excellent switching performance.

The typical gate charge is 70 nanoCoulombs, which helps minimize switching losses.

The dimensions of the TO-220 package are 11.17 mm in height, 10.36 mm in length, and 4.57 mm in width.

It operates within a temperature range of -55°C to 175°C, suitable for harsh environments.

This MOSFET supports through-hole mounting, which aids in effective heat dissipation.

The maximum gate-source voltage tolerance is ±20 volts, providing robust protection for the gate.

It is suitable for applications such as synchronous rectification in power supplies, motor control systems, and class D audio amplifiers.

This model features a 4-pin configuration, allowing for straightforward integration into circuits.

It utilizes an N-channel enhancement mode, which is common for high-efficiency applications.

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