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Infineon IPT Series N-Channel MOSFET 800 V 400 A 1.2 mΩ Rds(on) Surface Mount TO-263 8-Pin IPT012N08N5ATMA1

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Infineon IPT Series N-Channel MOSFET 800 V 400 A 1.2 mΩ Rds(on) Surface Mount TO-263 8-Pin IPT012N08N5ATMA1

Name: Infineon IPT Series N-Channel MOSFET 800 V 400 A 1.2 mΩ Rds(on) Surface Mount TO-263 8-Pin IPT012N08N5ATMA1
Brand: Infineon
SKU: 179163
Price: 6.48 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPT012N08N5ATMA1
Mount Type	Surface
Series	IPT
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	400A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	1.2mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Equipped with 8-pin TO-263 surface mount package for effective thermal management.
Low on-resistance of 1.2 mΩ minimizes conduction losses during operation.
Supports maximum power dissipation of 81 W for sustained heavy-duty use.
Operational temperature range from -55 °C to 175 °C ensures reliability in diverse environments.
Typical gate charge of 80 nC facilitates precise switching control.
Designed to meet automotive AEC-Q101 standards for high quality in vehicle applications.
Conforms to RoHS directives for hazardous substance restrictions.
Gate to source voltage limited to 20 V to maintain device integrity.

Product Description

Infineon IPT012N08N5ATMA1 is an advanced N-Channel MOSFET designed for demanding power conversion and automotive applications with robust electrical performance and thermal endurance. It operates at a maximum drain source voltage of 800 V and continuous current of 400 A, making it suitable for controlling large DC loads in industrial, automotive, and manufacturing sectors.

This device utilizes a surface mount TO-263 package with 8 pins and includes a large thermal pad for efficient heat dissipation, enhancing power handling under continuous operation with power dissipation rated at 81 W. The low on-resistance of 1.2 mΩ reduces conduction losses to improve overall efficiency.

The MOSFET is engineered to operate in a wide temperature range from -55 °C to 175 °C, ensuring stable performance in harsh conditions. The gate charge of 80 nC allows for precise and predictable switching behavior, while the gate source voltage is limited to 20 V for safety and reliability.

Compliant with the automotive AEC-Q101 qualification standard, it is highly reliable for vehicle power converters and battery management systems. Furthermore, it meets RoHS environmental standards by restricting hazardous substances.

8-pin TO-263 surface mount package provides efficient thermal management. 400 A maximum continuous drain current suitable for heavy load applications. 800 V maximum drain source voltage allows use in high-voltage switches.

Low Rds(on) reduces conduction losses for improved efficiency. Wide operating temperature range enhances device versatility. Automotive-grade quality with AEC-Q101 compliance. RoHS compliant ensuring environmental safety.

Designed for industrial, automotive, and power distribution applications.

This MOSFET is ideal for high-voltage traction inverter stages, battery power management, automotive power converters, industrial motor drives, and DC-DC converters. Its robust design and automotive qualifications make it a reliable choice for critical power electronics and switching stages in sophisticated systems.

Explore more Infineon semiconductor solutions and power control devices at EnvMart's Electronics & Electricals categories to find optimal components for your application needs.