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Infineon IPLK70R1K2P7ATMA1 N-Channel MOSFET 9.4A, 700V, ThinPAK 5x6, AEC-Q101

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 6.35mm
Model IPLK70R1K2P7ATMA1
Mount Type Surface
Series IPL
Maximum Operating Temperature 150°C
Package Type ThinPAK 5x6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 5
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 9.4A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 1.2mΩ
Maximum Power Dissipation Pd 25.5W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 3V
Forward Voltage Vf 0.9V

Key Features

  • Type N-Channel MOSFET supporting up to 9.4A continuous drain current.
  • High voltage endurance with maximum drain-source voltage of 700V, ideal for demanding circuits.
  • ThinPAK 5x6 package with only 1mm profile for space-saving PCB designs.
  • Low Rds(on) of 1.2mΩ for minimized conduction losses and high efficiency.
  • Features integrated ESD protection diode for reliable operation.
  • Supports -55°C to 150°C operating temperature, suitable for harsh environments.
  • Qualified per AEC-Q101 automotive standards and RoHS compliant.
  • Surface-mount package with 5 pins, streamlining assembly processes.

Product Description

The Infineon IPLK70R1K2P7ATMA1 is a high-performance N-Channel Power MOSFET, designed to provide efficient switching and high reliability in advanced power electronics and industrial applications. This device is part of Infineon’s CoolMOS™ P7 series and features a robust 700V maximum drain-source voltage and a continuous drain current of 9.4A, making it well-suited for circuits requiring high power handling.

Packaged in a compact ThinPAK 5x6 footprint, this MOSFET offers a low-profile solution (just 1mm high), ideal for densely populated PCB layouts in modern power designs. The exceptionally low on-state resistance (Rds(on)) of 1.2mΩ significantly reduces power losses, supporting high efficiency in both switching and conduction modes. Integrated ESD protection helps safeguard sensitive electronics from transient events, further enhancing system reliability.

Type N-Channel MOSFET supporting up to 9.4A continuous drain current. High voltage endurance with maximum drain-source voltage of 700V, ideal for demanding circuits. ThinPAK 5x6 package with only 1mm profile for space-saving PCB designs.

Low Rds(on) of 1.2mΩ for minimized conduction losses and high efficiency. Features integrated ESD protection diode for reliable operation. Supports -55°C to 150°C operating temperature, suitable for harsh environments. Qualified per AEC-Q101 automotive standards and RoHS compliant.

Surface-mount package with 5 pins, streamlining assembly processes.

This MOSFET is optimized for flyback topologies in switched-mode power supplies, including power adapters, industrial drives, lighting ballasts, and automotive electronic control units. Its broad temperature tolerance, automotive qualification (AEC-Q101), and RoHS compliance make it a dependable choice for rigorous industrial and automotive designs, where both long lifetime and rugged performance are required.

With Infineon’s reputation for innovation and quality, the IPLK70R1K2P7ATMA1 delivers the performance advantages demanded by engineers designing for energy efficiency, durability, and system safety.

Browse other power semiconductor devices and MOSFETs in the EnvMart Electronics & Electricals category to find the optimal match for your circuit design needs.

Infineon IPLK70R1K2P7ATMA1 N-Channel MOSFET 9.4A, 700V, ThinPAK 5x6, AEC-Q101
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Frequently Asked Questions

The maximum continuous drain current for this model is 9.4A.

This MOSFET has a maximum drain-source voltage of 700V.

The package dimensions are 6.35mm in length and have a profile height of just 1mm.

It supports an operating temperature range from -55°C to 150°C.

The on-state resistance (Rds(on)) is 1.2mΩ, which helps minimize conduction losses.

It is qualified per AEC-Q101 automotive standards.

Yes, it features an integrated ESD protection diode for reliable operation.

This model supports surface mounting and has a pin count of 5.

The maximum power dissipation is rated at 25.5W.

It is optimized for flyback topologies in switched-mode power supplies, including applications like power adapters and automotive electronic control units.

The typical gate charge (Qg) at Vgs is 80nC.

Yes, the IPLK70R1K2P7ATMA1 is RoHS compliant.

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