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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 900 V 9.2 A 3-Pin TO-247 STW11NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW11NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.2A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 980mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 95nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 9.2 A ensures reliable performance.
- High voltage rating of 900 V accommodates diverse industrial applications.
- Enhanced MDmesh SuperMESH technology for efficient power management.
- 3-Pin TO-247 through-hole package facilitates robust mounting.
- Maximum power dissipation of 200 W allows heavy-duty operation.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- Typical gate charge of 95 nC at Vgs supports fast switching.
- Maximum drain-source resistance of 980 mΩ reduces power loss.
Product Description
STMicroelectronics STW11NK90Z is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for power management applications requiring 900 V voltage and 9.2 A continuous drain current. Housed in a 3-Pin TO-247 through-hole package, it offers reliable mounting and durability.
This MOSFET features an enhancement mode channel with a maximum drain-source resistance of 980 mΩ, facilitating low conduction losses. It can dissipate power up to 200 W, making it suitable for high-power industrial uses. Its operating temperature ranges from -55°C to 150°C, ensuring robust performance in various environments.
The device includes a typical gate charge of 95 nC at a gate-source voltage of ±30 V, enabling fast switching capabilities. Its forward voltage of 1.6 V supports effective conduction during operation.
Applications include industrial, power electronics, manufacturing automation, HVAC systems, and other commercial electronics requiring durable and efficient MOSFET components. The TO-247 package supports through-hole mounting, facilitating integration into existing systems.
Maximum continuous drain current of 9.2 A ensures reliable performance. High voltage rating of 900 V accommodates diverse industrial applications. Enhanced MDmesh SuperMESH technology for efficient power management. 3-Pin TO-247 through-hole package facilitates robust mounting.
Maximum power dissipation of 200 W allows heavy-duty operation. Wide operating temperature range from -55°C to 150°C ensures durability. Typical gate charge of 95 nC at Vgs supports fast switching. Maximum drain-source resistance of 980 mΩ reduces power loss.
Forward voltage of 1.6 V assists in effective conduction. Designed for enhancement mode operation with a maximum gate-source voltage of ±30 V.
This STMicroelectronics MOSFET is a reliable choice for electronic engineers and industrial designers seeking durable semiconductor components. Explore more products in the MOSFET category on EnvMart for comprehensive industrial solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.2 A.
It has a maximum drain-source voltage rating of 900 V.
This model is housed in a 3-Pin TO-247 through-hole package.
The maximum power dissipation for this MOSFET is 200 W.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge at Vgs is 95 nC.
The maximum drain-source resistance is 980 mΩ.
This model features an N-channel enhancement mode.
The forward voltage for this MOSFET is 1.6 V.
The maximum gate-source voltage is ±30 V.
It is suitable for applications in industrial power electronics, manufacturing automation, and HVAC systems.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
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