onsemi UniFET N-Channel MOSFET 15 A 500 V Enhancement Mode 3-Pin TO-263 FDB15N50

onsemi FDB15N50 is a UniFET N-Channel MOSFET designed for power switching applications, capable of handling 15 A continuous current with a drain-source voltage of 500 V in an enhancement mode configuration. The 3-pin TO-263 surface mount package provides a compact and reliable form factor for efficient heat dissipation and easy integration into electronic circuits.

This MOSFET features a low on-state resistance of 380 milliohms which minimizes conduction losses and improves efficiency. It supports a maximum power dissipation of up to 300 watts, suitable for industrial, consumer electronics, power factor correction, and electronic lamp ballast applications.

The device operates across a wide temperature range from -55°C to 175°C, ensuring robust performance in demanding environments. Its typical gate charge of 33 nC enables efficient switching performance. The UniFET technology includes an internal gate-source ESD diode that withstands surge stresses up to 2000 V HBM, enhancing circuit protection.

With dimensions of approximately 11.33 mm width, 10.67 mm length, and 4.83 mm height, this MOSFET fits compactly on PCBs. Supports maximum continuous drain current of 15 A. Drain-source voltage capability of 500 V. Low Rds(on) of 380 mΩ for efficient operation.

High power dissipation rating of 300 W. Wide operating temperature range from -55°C to 175°C. Compact 3-pin TO-263 surface mount package. UniFET technology with enhanced switching characteristics and ESD protection. Typical gate charge of 33 nC for fast switching.

This onsemi UniFET MOSFET is ideal for use in switching power converters, power factor correction circuits, flat panel display TVs, ATX power supplies, and electronic lamp ballast applications, offering high reliability, efficiency, and robustness. Explore more on MOSFETs and Discrete Semiconductors in the Electronics & Electricals category at EnvMart.