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Infineon CoolMOS P7 N-Channel MOSFET & Diode 5.7 A 700 V Enhancement 3-Pin TO-251 IPSA70R2K0P7SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.1mm |
| Length | 6.6mm |
| Model | IPSA70R2K0P7SAKMA1 |
| Width | 2.38mm |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.7A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 17.6W |
| Typical Gate Charge Qg @ Vgs | 3.8nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- This enhancement mode MOSFET features a 3-pin TO-251 package suitable for through-hole mounting.
- The device supports a maximum power dissipation of 17.6 W for robust operation.
- Low typical gate charge of 3.8 nC enhances switching efficiency.
- Maximum drain source resistance of 2 Ω offers excellent conduction performance.
- Operates reliably within -40°C to 150°C temperature range.
- Maximum gate source voltage rating is 16 V ensuring durable gate protection.
- Forward diode voltage is low at 900 mV for efficient conduction.
Product Description
Infineon IPSA70R2K0P7SAKMA1 CoolMOS P7 N-Channel MOSFET & Diode is designed with super junction technology to optimize efficiency and performance for high voltage power applications.
This enhancement mode MOSFET supports a maximum continuous drain current of 5.7 A and can sustain drain source voltage up to 700 V, making it suitable for power management in industrial and consumer electronics.
The device comes in a TO-251 3-pin package designed for through-hole mounting, facilitating easy integration into printed circuit boards.
Low typical gate charge of 3.8 nC and a maximum drain source resistance of 2 Ω contribute to reduced switching losses and improved thermal behavior, providing high efficiency and enabling high power density designs.
It is rated for reliable operation across a broad temperature range from -40°C to 150°C, ensuring durability in demanding environments. Key dimensions such as length 6.6 mm, width 2.38 mm, and height 6.1 mm support compact and slim electronic applications.
This MOSFET features integrated ESD protection and a diode with a forward voltage of 900 mV. The CoolMOS P7 series targets cost-sensitive consumer markets for chargers, adapters, lighting, and televisions while maintaining high efficiency standards.
Low switching losses and excellent thermal performance support applications requiring high frequency and slim form factors. This component is ideal for industrial use, consumer electronics, power supplies, and HVAC systems.
Explore more Infineon power semiconductor devices and components at EnvMart for reliable electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.7 A.
It can sustain a maximum drain source voltage of 700 V.
The typical gate charge is 3.8 nC, which enhances switching efficiency.
The maximum power dissipation is rated at 17.6 W.
This model comes in a TO-251 package suitable for through-hole mounting.
The dimensions are 6.6 mm in length, 2.38 mm in width, and 6.1 mm in height.
The maximum operating temperature is 150°C.
The minimum operating temperature is -40°C.
The maximum gate source voltage rating is 16 V.
The forward voltage of the diode is low at 900 mV.
Yes, this MOSFET features integrated ESD protection.
The CoolMOS P7 series targets applications such as power supplies, chargers, adapters, lighting, and televisions.
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